| 54 |
Titel |
TI |
[EN] SEMICONDUCTOR COMPONENT WITH OPTIMIZED EDGE TERMINATION |
| 71/73 |
Anmelder/Inhaber |
PA |
INFINEON TECHNOLOGIES BIPOLAR GMBH & CO KG, DE
|
| 72 |
Erfinder |
IN |
BARTHELMESS REINER, DE
;
BASLER THOMAS, DE
;
KELLNER-WERDEHAUSEN UWE, DE
;
LUTZ JOSEF, DE
;
SCHULZE HANS-JOACHIM, DE
|
| 22/96 |
Anmeldedatum |
AD |
06.09.2012 |
| 21 |
Anmeldenummer |
AN |
201214361376 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
06.11.2014 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
DE
102011087487
30.11.2011
|
33
31
32 |
PRC
PRN
PRD |
EP
2012067441
06.09.2012
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 29/06
(2006.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
H01L 29/36
(2006.01)
H01L 29/861
(2006.01)
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H01L 29/0623
H01L 29/0657
H01L 29/0661
H01L 29/36
H01L 29/861
|
|
MCD-Hauptklasse |
MCM |
H01L 29/06
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
H01L 29/36
(2006.01)
H01L 29/861
(2006.01)
|
|
MCD-Zusatzklasse |
MCA |
|
| 57 |
Zusammenfassung |
AB |
[EN] A semiconductor component includes a two-sided semiconductor body, an inner zone with a basic doping of a first conduction type, and two semiconductor zones. The first zone, disposed between the first side and inner zone, is of the first conduction type with a doping concentration higher than that of the inner zone. The second zone, disposed between the second side and inner zone, is of a second conduction type complementary to the first type with a doping concentration higher than that of the inner zone. At least one first edge chamfer extends at a first angle to the extension plane of the transition from the second zone to the inner zone at least along the edge of the second zone and inner zone. At least one buried zone of the second conduction type is provided between the first zone and inner zone, and extends substantially parallel to the first zone. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
|
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|
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Prüfstoff-IPC |
ICP |
H01L 29/06
H01L 29/36
H01L 29/861
|
