| 54 |
Title |
TI |
[EN] A bipolar semiconductor component with a fully depletable channel zone |
| 71/73 |
Applicant/owner |
PA |
INFINEON TECHNOLOGIES AUSTRIA, AT
|
| 72 |
Inventor |
IN |
BABURSKE ROMAN, DE
;
LUTZ JOSEF, DE
;
SCHULZE HANS-JOACHIM, DE
;
SIEMIENIEC RALF, AT
|
| 22/96 |
Application date |
AD |
May 21, 2013 |
| 21 |
Application number |
AN |
201313898862 |
|
Country of application |
AC |
US |
|
Publication date |
PUB |
Dec 5, 2013 |
33
31
32 |
Priority data |
PRC
PRN
PRD |
DE
102009047808
Sep 30, 2009
|
33
31
32 |
PRC
PRN
PRD |
US
89423910
Sep 30, 2010
|
| 51 |
IPC main class |
ICM |
H01L 29/73
(2006.01)
|
| 51 |
IPC secondary class |
ICS |
|
|
IPC additional class |
ICA |
|
|
IPC index class |
ICI |
|
|
Cooperative patent classification |
CPC |
H01L 29/0623
H01L 29/66136
H01L 29/73
H01L 29/861
H01L 29/8611
H01L 2924/0002
|
|
MCD main class |
MCM |
H01L 29/73
(2006.01)
|
|
MCD secondary class |
MCS |
|
|
MCD additional class |
MCA |
|
| 57 |
Abstract |
AB |
[EN] A bipolar semiconductor component, in particular a diode, comprising an anode structure which controls its emitter efficiency in a manner dependent on the current density in such a way that the emitter efficiency is low at small current densities and sufficiently high at large current densities, and an optional cathode structure, which can inject additional holes during commutation, and production methods therefor. |
| 56 |
Cited documents identified in the search |
CT |
US000004641174A
US020030038335A1
US020050212075A1
US020070126024A1
US020080001159A1
US020100127304A1
|
| 56 |
Cited documents indicated by the applicant |
CT |
|
| 56 |
Cited non-patent literature identified in the search |
CTNP |
|
| 56 |
Cited non-patent literature indicated by the applicant |
CTNP |
|
|
Citing documents |
|
CN000108630362A
|
|
Sequence listings |
|
|
|
Search file IPC |
ICP |
H01L 29/861
|
