| 54 |
Titel |
TI |
[EN] A bipolar semiconductor component with a fully depletable channel zone |
| 71/73 |
Anmelder/Inhaber |
PA |
INFINEON TECHNOLOGIES AUSTRIA, AT
|
| 72 |
Erfinder |
IN |
BABURSKE ROMAN, DE
;
LUTZ JOSEF, DE
;
SCHULZE HANS-JOACHIM, DE
;
SIEMIENIEC RALF, AT
|
| 22/96 |
Anmeldedatum |
AD |
21.05.2013 |
| 21 |
Anmeldenummer |
AN |
201313898862 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
05.12.2013 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
DE
102009047808
30.09.2009
|
33
31
32 |
PRC
PRN
PRD |
US
89423910
30.09.2010
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 29/73
(2006.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H01L 29/0623
H01L 29/66136
H01L 29/73
H01L 29/861
H01L 29/8611
H01L 2924/0002
|
|
MCD-Hauptklasse |
MCM |
H01L 29/73
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
|
|
MCD-Zusatzklasse |
MCA |
|
| 57 |
Zusammenfassung |
AB |
[EN] A bipolar semiconductor component, in particular a diode, comprising an anode structure which controls its emitter efficiency in a manner dependent on the current density in such a way that the emitter efficiency is low at small current densities and sufficiently high at large current densities, and an optional cathode structure, which can inject additional holes during commutation, and production methods therefor. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
US000004641174A
US020030038335A1
US020050212075A1
US020070126024A1
US020080001159A1
US020100127304A1
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
|
Zitierende Dokumente |
|
Dokumente ermitteln
|
|
Sequenzprotokoll |
|
|
|
Prüfstoff-IPC |
ICP |
H01L 29/861
|
