Bibliographic data

Document US020120018846A1 (Pages: 45)

Bibliographic data Document US020120018846A1 (Pages: 45)
INID Criterion Field Contents
54 Title TI [EN] Surge-Current-Resistant Semiconductor Diode With Soft Recovery Behavior and Methods for Producing a Semiconductor Diode
71/73 Applicant/owner PA BABURSKE ROMAN, DE ; INFINEON TECHNOLOGIES AUSTRIA, AT ; LUTZ JOSEF, DE ; SCHULZE HANS-JOACHIM, DE ; SIEMIENIEC RALF, AT
72 Inventor IN BABURSKE ROMAN, DE ; LUTZ JOSEF, DE ; SCHULZE HANS-JOACHIM, DE ; SIEMIENIEC RALF, AT
22/96 Application date AD Sep 30, 2010
21 Application number AN 89423910
Country of application AC US
Publication date PUB Jan 26, 2012
33
31
32
Priority data PRC
PRN
PRD
DE
102009047808
20090930
51 IPC main class ICM H01L 29/73 (2006.01)
51 IPC secondary class ICS H01L 21/265 (2006.01)
IPC additional class ICA
IPC index class ICI
Cooperative patent classification CPC H01L 29/0623
H01L 29/66136
H01L 29/73
H01L 29/861
H01L 29/8611
H01L 2924/0002
MCD main class MCM H01L 29/73 (2006.01)
MCD secondary class MCS H01L 21/265 (2006.01)
MCD additional class MCA
57 Abstract AB [EN] A bipolar semiconductor component, in particular a diode, comprising an anode structure which controls its emitter efficiency in a manner dependent on the current density in such a way that the emitter efficiency is low at small current densities and sufficiently high at large current densities, and an optional cathode structure, which can inject additional holes during commutation, and production methods therefor.
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56 Cited non-patent literature indicated by the applicant CTNP
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Sequence listings
Search file IPC ICP H01L 21/331
H01L 23/62
H01L 29/739
H01L 29/73