54 |
Titel |
TI |
[EN] Surge-Current-Resistant Semiconductor Diode With Soft Recovery Behavior and Methods for Producing a Semiconductor Diode |
71/73 |
Anmelder/Inhaber |
PA |
BABURSKE ROMAN, DE
;
INFINEON TECHNOLOGIES AUSTRIA, AT
;
LUTZ JOSEF, DE
;
SCHULZE HANS-JOACHIM, DE
;
SIEMIENIEC RALF, AT
|
72 |
Erfinder |
IN |
BABURSKE ROMAN, DE
;
LUTZ JOSEF, DE
;
SCHULZE HANS-JOACHIM, DE
;
SIEMIENIEC RALF, AT
|
22/96 |
Anmeldedatum |
AD |
30.09.2010 |
21 |
Anmeldenummer |
AN |
89423910 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
26.01.2012 |
33 31 32 |
Priorität |
PRC PRN PRD |
DE
102009047808
20090930
|
51 |
IPC-Hauptklasse |
ICM |
H01L 29/73
(2006.01)
|
51 |
IPC-Nebenklasse |
ICS |
H01L 21/265
(2006.01)
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H01L 29/0623
H01L 29/66136
H01L 29/73
H01L 29/861
H01L 29/8611
H01L 2924/0002
|
|
MCD-Hauptklasse |
MCM |
H01L 29/73
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
H01L 21/265
(2006.01)
|
|
MCD-Zusatzklasse |
MCA |
|
57 |
Zusammenfassung |
AB |
[EN] A bipolar semiconductor component, in particular a diode, comprising an anode structure which controls its emitter efficiency in a manner dependent on the current density in such a way that the emitter efficiency is low at small current densities and sufficiently high at large current densities, and an optional cathode structure, which can inject additional holes during commutation, and production methods therefor. |
56 |
Entgegengehaltene Patentdokumente/Zitate, in Recherche ermittelt |
CT |
US020030038335A1 US020050212075A1 US020070126024A1 US020080001159A1 US020100127304A1
|
56 |
Entgegengehaltene Patentdokumente/Zitate, vom Anmelder genannt |
CT |
|
56 |
Entgegengehaltene Nichtpatentliteratur/Zitate, in Recherche ermittelt |
CTNP |
|
56 |
Entgegengehaltene Nichtpatentliteratur/Zitate, vom Anmelder genannt |
CTNP |
|
|
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Sequenzprotokoll |
|
|
|
Prüfstoff-IPC |
ICP |
H01L 21/331
H01L 23/62
H01L 29/739
H01L 29/73
|