Bibliographic data

Document US020100167509A1 (Pages: 10)

Bibliographic data Document US020100167509A1 (Pages: 10)
INID Criterion Field Contents
54 Title TI [EN] METHOD FOR PRODUCING A BURIED N-DOPED SEMICONDUCTOR ZONE IN A SEMICONDUCTOR BODY AND SEMICONDUCTOR COMPONENT
71/73 Applicant/owner PA INFINEON TECHNOLOGIES AG, DE
72 Inventor IN LUTZ JOSEF, DE ; NIEDERNOSTHEIDE FRANZ-JOSEF, DE ; SCHULZE HANS-JOACHIM, DE ; SIEMIENIEC RALF, AT
22/96 Application date AD Mar 8, 2010
21 Application number AN 71948710
Country of application AC US
Publication date PUB Jul 1, 2010
33
31
32		 Priority data PRC
PRN
PRD		 DE
102004039208
Aug 12, 2004
33
31
32		 PRC
PRN
PRD		 US
20187405
Aug 11, 2005
51 IPC main class ICM H01L 21/263 (2006.01)
51 IPC secondary class ICS
IPC additional class ICA
IPC index class ICI
Cooperative patent classification CPC H01L 21/263
H01L 21/26506
H01L 21/266
H01L 29/0878
H01L 29/66333
H01L 29/66712
H01L 29/7395
MCD main class MCM H01L 21/263 (2006.01)
MCD secondary class MCS
MCD additional class MCA
57 Abstract AB [EN] A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one side with nondoping particles for producing defects in the region to be doped. A thermal process is carried out. The invention additionally relates to a semiconductor component with a field stop zone.
56 Cited documents identified in the search CT US000004379306A
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56 Cited documents indicated by the applicant CT
56 Cited non-patent literature identified in the search CTNP
56 Cited non-patent literature indicated by the applicant CTNP
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Sequence listings
Search file IPC ICP H01L 21/322