| 54 |
Titel |
TI |
[EN] METHOD FOR PRODUCING A BURIED N-DOPED SEMICONDUCTOR ZONE IN A SEMICONDUCTOR BODY AND SEMICONDUCTOR COMPONENT |
| 71/73 |
Anmelder/Inhaber |
PA |
INFINEON TECHNOLOGIES AG, DE
|
| 72 |
Erfinder |
IN |
LUTZ JOSEF, DE
;
NIEDERNOSTHEIDE FRANZ-JOSEF, DE
;
SCHULZE HANS-JOACHIM, DE
;
SIEMIENIEC RALF, AT
|
| 22/96 |
Anmeldedatum |
AD |
08.03.2010 |
| 21 |
Anmeldenummer |
AN |
71948710 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
01.07.2010 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
DE
102004039208
12.08.2004
|
33
31
32 |
PRC
PRN
PRD |
US
20187405
11.08.2005
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 21/263
(2006.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H01L 21/263
H01L 21/26506
H01L 21/266
H01L 29/0878
H01L 29/66333
H01L 29/66712
H01L 29/7395
|
|
MCD-Hauptklasse |
MCM |
H01L 21/263
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
|
|
MCD-Zusatzklasse |
MCA |
|
| 57 |
Zusammenfassung |
AB |
[EN] A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one side with nondoping particles for producing defects in the region to be doped. A thermal process is carried out. The invention additionally relates to a semiconductor component with a field stop zone. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
US000004379306A
US000006351024B1
US000006475876B2
US000006610572B1
US020010030331A1
US020030054641A1
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
|
Zitierende Dokumente |
|
Dokumente ermitteln
|
|
Sequenzprotokoll |
|
|
|
Prüfstoff-IPC |
ICP |
H01L 21/322
|
