54 |
Titel |
TI |
[EN] SEMICONDUCTOR DEVICE AND METHOD FOR FORMING SAME |
71/73 |
Anmelder/Inhaber |
PA |
INFINEON TECHNOLOGIES AUSTRIA, AT
|
72 |
Erfinder |
IN |
ELPELT RUDOLF, DE
;
RUEB MICHAEL, AT
;
RUPP ROLAND, DE
;
TREU MICHAEL, AT
|
22/96 |
Anmeldedatum |
AD |
30.07.2007 |
21 |
Anmeldenummer |
AN |
83054207 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
05.02.2009 |
33 31 32 |
Priorität |
PRC PRN PRD |
|
51 |
IPC-Hauptklasse |
ICM |
H01L 29/808
(2006.01)
|
51 |
IPC-Nebenklasse |
ICS |
H01L 21/266
(2006.01)
H01L 21/337
(2006.01)
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H01L 21/0465
H10D 12/031
H10D 30/0515
H10D 30/831
H10D 62/221
H10D 62/8325
|
|
MCD-Hauptklasse |
MCM |
H01L 29/808
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
H01L 21/266
(2006.01)
H01L 21/337
(2006.01)
|
|
MCD-Zusatzklasse |
MCA |
|
57 |
Zusammenfassung |
AB |
[EN] A method for manufacturing a semiconductor device. The method includes providing a semiconductor body of a conductivity type, wherein the semiconductor body comprises a first surface. At least one buried region of a second conductivity type is formed in the semiconductor body and at least a surface region of the second conductivity type is formed at the first surface of the semiconductor body, wherein the buried region and the surface region are formed such that they are spaced apart from each other. The buried region is formed by deep implantation of a first dopant of the second conductivity type. |
56 |
Entgegengehaltene Patentdokumente/Zitate, in Recherche ermittelt |
CT |
US000006034385A US000006459108B1 US000006661042B2 US020070114626A1
|
56 |
Entgegengehaltene Patentdokumente/Zitate, vom Anmelder genannt |
CT |
|
56 |
Entgegengehaltene Nichtpatentliteratur/Zitate, in Recherche ermittelt |
CTNP |
|
56 |
Entgegengehaltene Nichtpatentliteratur/Zitate, vom Anmelder genannt |
CTNP |
|
|
Zitierende Dokumente |
|
US000008748276B2
US020130017675A1
|
|
Sequenzprotokoll |
|
|
|
Prüfstoff-IPC |
ICP |
H01L 21/265
H01L 21/337
H01L 29/06
H01L 29/78
H01L 29/808
|