| 54 |
Title |
TI |
[EN] SEMICONDUCTOR DEVICE AND METHOD FOR FORMING SAME |
| 71/73 |
Applicant/owner |
PA |
INFINEON TECHNOLOGIES AUSTRIA, AT
|
| 72 |
Inventor |
IN |
ELPELT RUDOLF, DE
;
RUEB MICHAEL, AT
;
RUPP ROLAND, DE
;
TREU MICHAEL, AT
|
| 22/96 |
Application date |
AD |
Jul 30, 2007 |
| 21 |
Application number |
AN |
83054207 |
|
Country of application |
AC |
US |
|
Publication date |
PUB |
Feb 5, 2009 |
33
31
32 |
Priority data |
PRC
PRN
PRD |
|
| 51 |
IPC main class |
ICM |
H01L 29/808
(2006.01)
|
| 51 |
IPC secondary class |
ICS |
H01L 21/266
(2006.01)
H01L 21/337
(2006.01)
|
|
IPC additional class |
ICA |
|
|
IPC index class |
ICI |
|
|
Cooperative patent classification |
CPC |
H01L 21/0465
H01L 29/1029
H01L 29/66068
H01L 29/66909
H01L 29/8083
|
|
MCD main class |
MCM |
H01L 29/808
(2006.01)
|
|
MCD secondary class |
MCS |
H01L 21/266
(2006.01)
H01L 21/337
(2006.01)
|
|
MCD additional class |
MCA |
|
| 57 |
Abstract |
AB |
[EN] A method for manufacturing a semiconductor device. The method includes providing a semiconductor body of a conductivity type, wherein the semiconductor body comprises a first surface. At least one buried region of a second conductivity type is formed in the semiconductor body and at least a surface region of the second conductivity type is formed at the first surface of the semiconductor body, wherein the buried region and the surface region are formed such that they are spaced apart from each other. The buried region is formed by deep implantation of a first dopant of the second conductivity type. |
| 56 |
Cited documents identified in the search |
CT |
US000006034385A
US000006459108B1
US000006661042B2
US020070114626A1
|
| 56 |
Cited documents indicated by the applicant |
CT |
|
| 56 |
Cited non-patent literature identified in the search |
CTNP |
|
| 56 |
Cited non-patent literature indicated by the applicant |
CTNP |
|
|
Citing documents |
|
Determine documents
|
|
Sequence listings |
|
|
|
Search file IPC |
ICP |
H01L 21/265
H01L 21/337
H01L 29/06
H01L 29/78
H01L 29/808
|
