| 54 |
Titel |
TI |
[EN] SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING IT |
| 71/73 |
Anmelder/Inhaber |
PA |
INFINEON TECHNOLOGIES AUSTRIA, AT
|
| 72 |
Erfinder |
IN |
RUEB MICHAEL, AT
;
SCHMITT MARKUS, DE
;
TOLKSDORF CAROLIN, DE
;
WILLMEROTH ARMIN, DE
|
| 22/96 |
Anmeldedatum |
AD |
03.10.2007 |
| 21 |
Anmeldenummer |
AN |
86666207 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
02.10.2008 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
DE
102006047489
20061005
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 29/76
(2006.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
H01L 21/425
(2006.01)
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H10D 30/665
H10D 62/111
H10D 62/127
H10D 62/393
H10D 64/111
|
|
MCD-Hauptklasse |
MCM |
H01L 29/76
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
H01L 21/425
(2006.01)
|
|
MCD-Zusatzklasse |
MCA |
|
| 57 |
Zusammenfassung |
AB |
[EN] A semiconductor component includes a semiconductor body having an edge with an edge zone of a first conductivity type. Charge compensation regions of a second conductivity type are embedded into the edge zone, with the charge compensation regions extending from a top side of the semiconductor component vertically into the semiconductor body. For the number Ns of charge carriers present in a volume Vs between two charge compensation regions that are adjacent in a direction perpendicular to the edge, and for the number Np of charge carriers present in a volume Vp between two charge compensation regions that are adjacent in a direction parallel to the edge, Np>Ns holds true. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
US000006326656B1
US000006376890B1
US000006630698B1
US000006825565B2
US000006844592B2
US000006870201B1
US000006888195B2
US000006894329B2
US000007002205B2
US000007091557B2
US020020037636A1
US020020063281A1
US020020167020A1
US020020179942A1
US020030011046A1
US020040124465A1
US020060202264A1
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
|
Zitierende Dokumente |
|
CN000103928519A
EP000003751598A1
TW00000I570929B
TW00000I699887B
US000009142664B2
US000009209292B2
US000009515137B2
US000009570607B2
US000009947741B2
US000010381474B2
US000011222962B2
US000011348838B2
US020140197477A1
US020140231912A1
US020150021670A1
US020150263165A1
US020170338301A1
|
|
Sequenzprotokoll |
|
|
|
Prüfstoff-IPC |
ICP |
H01L 21/425
H01L 29/06 E
H01L 29/78
|
