| 54 |
Titel |
TI |
[EN] METHOD FOR FABRICATING A TRENCH STRUCTURE, AND A SEMICONDUCTOR ARRANGEMENT COMPRISING A TRENCH STRUCTURE |
| 71/73 |
Anmelder/Inhaber |
PA |
INFINEON TECHNOLOGIES AUSTRIA, AT
|
| 72 |
Erfinder |
IN |
HIRLER FRANZ, DE
;
KAUTZSCH THORALF, DE
;
MAUDER ANTON, DE
;
RUEB MICHAEL, AT
;
SCHULZE HANS-JOACHIM, DE
;
STRACK HELMUT, DE
;
WILLMEROTH ARMIN, DE
|
| 22/96 |
Anmeldedatum |
AD |
06.08.2007 |
| 21 |
Anmeldenummer |
AN |
83415407 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
20.03.2008 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
DE
102006037510
20060810
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 29/94
(2006.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
H01L 21/76
(2006.01)
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H01L 21/3247
H01L 21/76224
H10D 62/116
H10D 64/027
H10D 64/117
H10D 84/141
H10D 84/143
|
|
MCD-Hauptklasse |
MCM |
H01L 29/94
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
H01L 21/76
(2006.01)
|
|
MCD-Zusatzklasse |
MCA |
|
| 57 |
Zusammenfassung |
AB |
[EN] A semiconductor device, in which a first trench section is produced proceeding from a surface of a semiconductor body into the semiconductor body. A semiconductor layer is produced above the surface and above the first trench section. A further trench section is produced in the semiconductor layer in such a way that the first trench section and the further trench section form a continuous trench structure. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
US000007157378B2
US020070243692A1
US020080230916A1
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
|
Zitierende Dokumente |
|
CN000101859780A
CN000102347364A
CN000102856208A
CN000103532637A
CN000104167443A
CN000105849675A
DE102013106798A1
US000007880224B2
US000008933533B2
US000010250735B2
US000010438205B2
US000010732821B2
US000010739974B2
US000010748153B2
US000010778828B2
US000010788953B2
US000010796309B2
US000010860199B2
US000010884579B2
US000010902424B2
US000010914606B2
US000010915224B2
US000010972600B2
US000010977651B2
US000011073799B2
US000011169691B2
US000011240362B2
US000011281368B2
US000011316968B2
US000011321731B2
US000011449194B2
US000011500516B2
US000011586348B2
US000011604559B2
US000011650713B2
US000011675476B2
US000011733055B2
US000011733656B2
US000011734708B2
US000011736602B2
US000011783305B2
US000011809700B2
US000011816325B2
US000011836725B2
US000012026352B2
US000012028473B2
US000012088755B2
US000012164745B2
US000012175065B2
US000012228889B2
US000012236079B2
US020090189216A1
|
|
Sequenzprotokoll |
|
|
|
Prüfstoff-IPC |
ICP |
H01L 21/762 T
|
