| 54 |
Titel |
TI |
[EN] METHOD FOR FABRICATING A TRENCH STRUCTURE, AND A SEMICONDUCTOR ARRANGEMENT COMPRISING A TRENCH STRUCTURE |
| 71/73 |
Anmelder/Inhaber |
PA |
INFINEON TECHNOLOGIES AUSTRIA, AT
|
| 72 |
Erfinder |
IN |
HIRLER FRANZ, DE
;
KAUTZSCH THORALF, DE
;
MAUDER ANTON, DE
;
RUEB MICHAEL, AT
;
SCHULZE HANS-JOACHIM, DE
;
STRACK HELMUT, DE
;
WILLMEROTH ARMIN, DE
|
| 22/96 |
Anmeldedatum |
AD |
06.08.2007 |
| 21 |
Anmeldenummer |
AN |
83415407 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
20.03.2008 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
DE
102006037510
20060810
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 29/94
(2006.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
H01L 21/76
(2006.01)
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H01L 21/3247
H01L 21/76224
H01L 29/0653
H01L 29/407
H01L 29/66621
H01L 29/7803
H01L 29/7804
|
|
MCD-Hauptklasse |
MCM |
H01L 29/94
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
H01L 21/76
(2006.01)
|
|
MCD-Zusatzklasse |
MCA |
|
| 57 |
Zusammenfassung |
AB |
[EN] A semiconductor device, in which a first trench section is produced proceeding from a surface of a semiconductor body into the semiconductor body. A semiconductor layer is produced above the surface and above the first trench section. A further trench section is produced in the semiconductor layer in such a way that the first trench section and the further trench section form a continuous trench structure. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
US000007157378B2
US020070243692A1
US020080230916A1
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
|
Zitierende Dokumente |
|
Dokumente ermitteln
|
|
Sequenzprotokoll |
|
|
|
Prüfstoff-IPC |
ICP |
H01L 21/762 T
|
