| 54 |
Titel |
TI |
[EN] Power semiconductor component with a drift zone and a high-dielectric compensation zone and method for producing a compensation zone |
| 71/73 |
Anmelder/Inhaber |
PA |
INFINEON TECHNOLOGIES AUSTRIA, AT
|
| 72 |
Erfinder |
IN |
HIRLER FRANZ, DE
;
RUEB MICHAEL, AT
|
| 22/96 |
Anmeldedatum |
AD |
31.01.2007 |
| 21 |
Anmeldenummer |
AN |
70055507 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
30.08.2007 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
DE
102006004405
20060131
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 29/76
(2006.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H10D 12/035
H10D 12/461
H10D 30/0295
H10D 30/65
H10D 30/66
H10D 30/668
H10D 30/831
H10D 62/103
H10D 62/105
H10D 62/111
H10D 62/116
H10D 62/127
H10D 64/117
H10D 64/118
H10D 64/256
H10D 8/60
|
|
MCD-Hauptklasse |
MCM |
H01L 29/76
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
|
|
MCD-Zusatzklasse |
MCA |
|
| 57 |
Zusammenfassung |
AB |
[EN] A power semiconductor component includes a drift zone in a semiconductor body, a component junction and a compensation zone. The component junction is disposed between the drift zone and a further component zone, which is configured such that when a blocking voltage is applied to the component junction, a space charge zone forms extending generally in a first direction in the drift zone. The compensation zone is disposed adjacent to the drift zone in a second direction and includes at least one high-dielectric material having a temperature-dependent dielectric constant. The temperature dependence of the compensation zone varies in the second direction. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
|
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Sequenzprotokoll |
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Prüfstoff-IPC |
ICP |
H01L 29/06 E
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