| 54 |
Title |
TI |
[EN] Method for producing a buried N-doped semiconductor zone in a semiconductor body and semiconductor component |
| 71/73 |
Applicant/owner |
PA |
LUTZ JOSEF
;
NIEDERNOSTHEIDE FRANZ-JOSEF
;
SCHULZE HANS-JOACHIM
;
SIEMIENIEC RALF
|
| 72 |
Inventor |
IN |
LUTZ JOSEF, DE
;
NIEDERNOSTHEIDE FRANZ-JOSEF, DE
;
SCHULZE HANS-JOACHIM, DE
;
SIEMIENIEC RALF, AT
|
| 22/96 |
Application date |
AD |
Aug 11, 2005 |
| 21 |
Application number |
AN |
20187405 |
|
Country of application |
AC |
US |
|
Publication date |
PUB |
Mar 2, 2006 |
33
31
32 |
Priority data |
PRC
PRN
PRD |
DE
102004039208
20040812
|
| 51 |
IPC main class |
ICM |
H01L 29/76
(2006.01)
|
| 51 |
IPC secondary class |
ICS |
H01L 21/22
(2006.01)
|
|
IPC additional class |
ICA |
|
|
IPC index class |
ICI |
|
|
Cooperative patent classification |
CPC |
H01L 21/263
H01L 21/26506
H01L 21/266
H01L 29/0878
H01L 29/66333
H01L 29/66712
H01L 29/7395
|
|
MCD main class |
MCM |
H01L 29/76
(2006.01)
|
|
MCD secondary class |
MCS |
H01L 21/22
(2006.01)
|
|
MCD additional class |
MCA |
|
| 57 |
Abstract |
AB |
[EN] A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one side with nondoping particles for producing defects in the region to be doped. A thermal process is carried out. The invention additionally relates to a semiconductor component with a field stop zone. |
| 56 |
Cited documents identified in the search |
CT |
US000004379306A
US000006351024B1
US000006475876B2
US000006610572B1
US020030054641A1
|
| 56 |
Cited documents indicated by the applicant |
CT |
|
| 56 |
Cited non-patent literature identified in the search |
CTNP |
|
| 56 |
Cited non-patent literature indicated by the applicant |
CTNP |
|
|
Citing documents |
|
CN000102122945A
US000008236676B2
US000008637328B2
US000008647968B2
US000008754444B2
US000008921979B2
US000010734230B2
US000011183388B2
US000011569092B2
US020080122001A1
US020090305486A1
US020110101463A1
|
|
Sequence listings |
|
|
|
Search file IPC |
ICP |
H01L 21/22
H01L 29/739
H01L 29/76
H01L 29/78
|
