| 54 |
Titel |
TI |
[EN] Method and apparatus for generating laser radiation on the basis of semiconductors |
| 71/73 |
Anmelder/Inhaber |
PA |
MENZEL RALF
;
RAAB VOLKER
|
| 72 |
Erfinder |
IN |
MENZEL RALF, DE
;
RAAB VOLKER, DE
|
| 22/96 |
Anmeldedatum |
AD |
28.05.2004 |
| 21 |
Anmeldenummer |
AN |
85664204 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
18.11.2004 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
DE
10161076
12.12.2001
|
33
31
32 |
PRC
PRN
PRD |
EP
0212400
06.11.2002
|
| 51 |
IPC-Hauptklasse |
ICM |
H01S 3/10
|
| 51 |
IPC-Nebenklasse |
ICS |
H01S 3/082
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H01S 3/0818
H01S 5/14
H01S 5/141
H01S 5/142
H01S 5/2036
|
|
MCD-Hauptklasse |
MCM |
|
|
MCD-Nebenklasse |
MCS |
H01S 5/022
(2006.01)
H01S 5/14
(2006.01)
|
|
MCD-Zusatzklasse |
MCA |
|
| 57 |
Zusammenfassung |
AB |
[EN] In a device and method for generating laser radiation based on semiconductors, with which laser light of a high beam quality can be produced, the device producing laser radiation has a reflective element, which has no influence on the divergence of the light exiting the semiconductor and is placed at a distance from the semiconductor at which the arrangement forms an external unstable resonator, the divergent light exiting the semiconductor. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
US000004426707A
US000005327447A
US000005642375A
US000005644589A
US000005822355A
US000005949801A
US000006526071B1
US000006661815B1
US000006700904B2
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
|
Zitierende Dokumente |
|
Dokumente ermitteln
|
|
Sequenzprotokoll |
|
|
|
Prüfstoff-IPC |
ICP |
H01S 3/10
|
