| 54 |
Titel |
TI |
[EN] High-voltage semiconductor component |
| 71/73 |
Anmelder/Inhaber |
PA |
AHLERS DIRK
;
DEBOY GERALD
;
RUEB MICHAEL
;
STRACK HELMUT
;
WEBER HANS MARTIN
|
| 72 |
Erfinder |
IN |
AHLERS DIRK, DE
;
DEBOY GERALD, DE
;
RUEB MICHAEL, AT
;
STRACK HELMUT, DE
;
WEBER HANS MARTIN, AT
|
| 22/96 |
Anmeldedatum |
AD |
06.06.2003 |
| 21 |
Anmeldenummer |
AN |
45585803 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
18.12.2003 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
US
78602201
20011109
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 21/336
|
| 51 |
IPC-Nebenklasse |
ICS |
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H01L 29/0634
H01L 29/0696
H01L 29/41766
H01L 29/4232
H01L 29/4238
H01L 29/7801
H01L 29/7802
H01L 29/7811
H01L 29/7816
|
|
MCD-Hauptklasse |
MCM |
|
|
MCD-Nebenklasse |
MCS |
H01L 29/06
(2006.01)
H01L 29/78
(2006.01)
|
|
MCD-Zusatzklasse |
MCA |
H01L 29/417
(2006.01)
H01L 29/423
(2006.01)
|
| 57 |
Zusammenfassung |
AB |
[EN] A process for manufacturing of a semiconductor device comprising a blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode, the side of the zone of the second conductivity type facing the drain zone forming a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, areas of the first and second conductivity type nested in one another, comprises the step of: varying in individual semiconductor layers, by doping, the degree of compensation in the regions of the second conductivity type. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
US000003171068A
US000003925803A
US000003961356A
US000004003072A
US000004055884A
US000004072975A
US000004101922A
US000004145700A
US000004320410A
US000004345265A
US000004366495A
US000004376286A
US000004404575A
US000004417385A
US000004561003A
US000004593302A
US000004748103A
US000004754310A
US000004775881A
US000004777149A
US000004895810A
US000004914058A
US000004926226A
US000004941026A
US000004974059A
US000004975782A
US000004994871A
US000005008725A
US000005010025A
US000005019522A
US000005045903A
US000005072269A
US000005089434A
US000005126807A
US000005182234A
US000005216275A
US000005231474A
US000005283201A
US000005340315A
US000005438215A
US000005473180A
US000005559353A
US000005648283A
US000005747831A
US000005801417A
US000005883411A
US000005973360A
US000006037631A
US000006291856B1
US000006667514B2
US020010050549A1
US020010053568A1
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
|
Zitierende Dokumente |
|
Dokumente ermitteln
|
|
Sequenzprotokoll |
|
|
|
Prüfstoff-IPC |
ICP |
H01L 21/336 V
H01L 29/78
|
