| 54 |
Titel |
TI |
[EN] Transistor device with high current robustness |
| 71/73 |
Anmelder/Inhaber |
PA |
INFINEON TECHNOLOGIES AG, DE
|
| 72 |
Erfinder |
IN |
BABURSKE ROMAN, DE
;
BHOJANI RITESHKUMAR, DE
;
LUTZ JOSEF, DE
;
NIEDERNOSTHEIDE FRANZ-JOSEF, DE
;
SCHULZE HANS-JOACHIM, DE
|
| 22/96 |
Anmeldedatum |
AD |
22.08.2017 |
| 21 |
Anmeldenummer |
AN |
201715682807 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
19.11.2019 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
DE
102016115801
20160825
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 29/739
(2006.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
H01L 27/02
(2006.01)
H01L 29/06
(2006.01)
H01L 29/08
(2006.01)
H01L 29/36
(2006.01)
H03K 17/16
(2006.01)
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H01L 27/0222
H01L 29/0603
H01L 29/0619
H01L 29/0684
H01L 29/0696
H01L 29/0834
H01L 29/36
H01L 29/7393
H01L 29/7397
H03K 17/16
|
|
MCD-Hauptklasse |
MCM |
H01L 29/739
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
H01L 27/02
(2006.01)
H01L 29/06
(2006.01)
H01L 29/08
(2006.01)
H01L 29/36
(2006.01)
H03K 17/16
(2006.01)
|
|
MCD-Zusatzklasse |
MCA |
|
| 57 |
Zusammenfassung |
AB |
[EN] A transistor device includes a first emitter region of a first doping type, a second emitter region of a second doping type, a body of the second doping type, a drift region of the first doping type, a field-stop region of the first doping type, at least one boost structure, and a gate electrode. The boost structure is arranged between the field-stop region and the second emitter region. The at least one boost structure includes a base region of the first doping type and at least one auxiliary emitter region of the second doping type separated from the second emitter region by the base region. An overall dopant dose in the drift region and the field-stop region in a current flow direction of the transistor device is higher than a breakthrough charge of a semiconductor material of the drift region and the field-stop region. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
US020070278472A1
US020100078765A1
US020130264607A1
US020130328105A1
US020140015007A1
US020140209970A1
US020150091053A1
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
DE000010361136A1
DE102005029263A1
DE102007020657A1
DE102013105057A1
DE102014101951A1
DE102015115723A1
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
|
Zitierende Dokumente |
|
Dokumente ermitteln
|
|
Sequenzprotokoll |
|
|
|
Prüfstoff-IPC |
ICP |
H01L 29/06
H01L 29/08
H01L 29/36
H03K 17/16
|
