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Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
“Implant Isolation of Gallium Arsenide” Ahmed Shuja, Thesis, School of Electronics, Computing and Mathematics, University of Surrey, May 2002. 1;
“Tunable Bragg reflectors on silicon-on-insulator rib waveguides”, Ivano Giutoni et al., Oct. 12, 2009 / vol. 17, No. 21, Optics Express 18518-18524. 1;
Formation of Buried Insulating Layers in Silicon by the Implantation of High Doses of Oxygen, P.L.F. Hemment, et al., Nuclear Instruments and Methods 209/210 (1983) 157-164. 1;
GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy, He Ji-Fang et al., Journal of Physics D: Applied Physics, J.Phyus. D: Appl.Phys. 44(2011) 335102 (5pp). 1;
Metamorphic growth for application in long-wavelength (1.3-1.55 µm) lasers and MODFET-type structures on GaAs substrates, E.S. Semenova et al., Nanotechnology 15 (2004) S283-S287. 1;
Room temperature operating infrared (8-12 µm) photo detector with InAs quantum dots in modulation doped heterostructures, Taehee Cho et al., IEEE, Dec. 6, 1998, pp. 441-444. 1;
U.S. Appl. No. 08/949,504, Geoff W. Taylor, filed Oct. 19, 1997. 1;
U.S. Appl. No. 09/710,217, Geoff W. Taylor, filed Nov. 11, 2000. 1
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