Bibliografische Daten

Dokument US000009614112B2 (Seiten: 53)

Bibliografische Daten Dokument US000009614112B2 (Seiten: 53)
INID Kriterium Feld Inhalt
54 Titel TI [EN] Imaging cell array integrated circuit
71/73 Anmelder/Inhaber PA OPEL SOLAR INC, US ; THE UNIV OF CONNECTICUT TECH PARTNERSHIPS & LICENSING, US ; UNIV CONNECTICUT, US
72 Erfinder IN TAYLOR GEOFF W, US
22/96 Anmeldedatum AD 11.09.2013
21 Anmeldenummer AN 201314023525
Anmeldeland AC US
Veröffentlichungsdatum PUB 04.04.2017
33
31
32		 Priorität PRC
PRN
PRD

51 IPC-Hauptklasse ICM
51 IPC-Nebenklasse ICS H01L 27/146 (2006.01)
H01L 31/0224 (2006.01)
H01L 31/0232 (2014.01)
H01L 31/0352 (2006.01)
H01L 31/111 (2006.01)
IPC-Zusatzklasse ICA
IPC-Indexklasse ICI
Gemeinsame Patentklassifikation CPC H10F 30/263
H10F 39/014
H10F 39/151
H10F 39/153
H10F 39/18
H10F 39/1847
H10F 39/8033
H10F 39/80377
H10F 39/8067
H10F 77/1433
H10F 77/146
H10F 77/206
H10F 77/413
MCD-Hauptklasse MCM
MCD-Nebenklasse MCS H01L 27/146 (2006.01)
H01L 31/0224 (2006.01)
H01L 31/0232 (2014.01)
H01L 31/0352 (2006.01)
H01L 31/111 (2006.01)
MCD-Zusatzklasse MCA
57 Zusammenfassung AB [EN] A semiconductor device is provided that includes an array of imaging cells realized from a plurality of layers formed on a substrate, wherein the plurality of layers includes at least one modulation doped quantum well structure spaced from at least one quantum dot structure. Each respective imaging cell includes an imaging region spaced from a corresponding charge storage region. The at least one quantum dot structure of the imaging region generates photocurrent arising from absorption of incident electromagnetic radiation. The at least one modulation doped quantum well structure defines a buried channel for lateral transfer of the photocurrent for charge accumulation in the charge storage region and output therefrom. The at least one modulation doped quantum well structure and the at least one quantum dot structure of each imaging cell can be disposed within a resonant cavity that receives the incident electromagnetic radiation or below a structured metal film having a periodic array of holes.
56 Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt		 CT US000004933731A
US020040021138A1
US020050051861A1
US020050271092A1
US020110073762A1
US020120205541A1
56 Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt		 CT US000006031243A
US000006040936A
US000006479844B2
US000006841795B2
US000006849866B2
US000006853014B2
US000006870207B2
US000006873273B2
US000006954473B2
US000006995407B2
US020120104358A1
US020140050242A1
WO002002071490A1
WO002008011152A2
US000007332752B2
56 Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt		 CTNP
56 Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt		 CTNP “Extraordinary Transmission in Metal Hole Arrayphotonic Crystal Hybrid Structures”, O. Glushko et al., Optics Express 17174, Jul. 16, 2012, vol. 20, No. 15. 1;
“Kodak CCD Primer, #KCP-001, Charge-Coupled Device (CCD) Image Sensors,” 1992, downloaded from http://www.kodak.com/US/en/digital/pdf/ccdPrimerPart2.pdf. 1;
“Optimum Design for a 2-Phase CCD”, Y. Kayakami et al., Microelectronics Research Laboratories, NEC Corporation, 1995. 1;
U.S. Appl. No. 08/949,504, filed Oct. 14, 1997 (Abandoned). 1;
U.S. Appl. No. 09/710,217, filed Nov. 10, 2000 (Abandoned). 1;
U.S. Appl. No. 60/376,238, filed Apr. 26, 2002. 1
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Sequenzprotokoll
Prüfstoff-IPC ICP H01L 27/146
H01L 27/148
H01L 31/0224
H01L 31/0232
H01L 31/0352