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Bibliographic data Document US000009590136B2 (Pages: 62)

INID	Criterion	Field	Contents
54	Title	TI	[EN] Semiconductor device for optoelectronic integrated circuits
71/73	Applicant/owner	PA	OPEL SOLAR INC, US ; UNIV CONNECTICUT, US
72	Inventor	IN	TAYLOR GEOFF W, US
22/96	Application date	AD	Jun 11, 2015
21	Application number	AN	201514736624
	Country of application	AC	US
	Publication date	PUB	Mar 7, 2017
33 31 32	Priority data	PRC PRN PRD
51	IPC main class	ICM	H01L 29/06 (2006.01)
51	IPC secondary class	ICS	H01L 21/02 (2006.01) H01L 21/70 (2006.01) H01L 31/102 (2006.01) H01L 33/00 (2010.01) H01L 33/02 (2010.01) H01L 33/04 (2010.01)
	IPC additional class	ICA
	IPC index class	ICI
	Cooperative patent classification	CPC	H01S 5/06203 H01S 5/183 H01S 5/3086 H01S 5/343 H10D 30/4732 H10D 62/116 H10D 62/149 H10D 62/357 H10D 62/85 H10D 64/62 H10H 20/013 H10H 20/0137 H10H 20/062 H10H 20/811 H10H 20/812 H10H 20/814 H10H 20/8215 H10H 20/824
	MCD main class	MCM	H01L 29/06 (2006.01)
	MCD secondary class	MCS	H01L 21/02 (2006.01) H01L 21/70 (2006.01) H01L 31/102 (2006.01) H01L 33/00 (2010.01) H01L 33/02 (2010.01) H01L 33/04 (2010.01)
	MCD additional class	MCA
57	Abstract	AB	[EN] A semiconductor device includes a series of layers formed on a substrate, including a first plurality of n-type layers, a second plurality of layers that form a p-type modulation doped quantum well structure (MDQWS), a third plurality of layers disposed between the p-type MDQWS and a fourth plurality of layers that form an n-type MDQWS, and a fifth plurality of p-type layers. The first plurality of layers includes a first etch stop layer of n-type formed on an n-type contact layer. The third plurality of layers includes a second etch stop layer formed above the p-type MDQWS and a third etch stop layer formed above and offset from the second etch stop layer. The fifth plurality of layers includes a fourth etch stop layer of p-type formed above the n-type MDQWS and a fifth etch stop layer of p-type doping formed above and offset from the fourth etch stop layer.
56	Cited documents identified in the search	CT	US000005698900A US020030080331A1 US020040079963A1 US020040081216A1 US020060141651A1 US020060141682A1 US020060208279A1
56	Cited documents indicated by the applicant	CT	US000005804847A US000006031243A US000006479844B2 US000006841795B2 US000006849866B2 US000006853014B2 US000006870207B2 US000006873273B2 US000006954473B2 US000006995407B2 US000007332752B2 US020140050242A1
56	Cited non-patent literature identified in the search	CTNP
56	Cited non-patent literature indicated by the applicant	CTNP	"Development of Refractory Ohmic Contact Materials for Gallium Arsenide Compound Semiconductors", Masanori Murakami, Science and Technology of Advanced Materials 3 (2002) pp. 1-27. 1; "InXGa1-XAs Ohmic Contacts to n-Type GaAs with a Tungsten Nitride Barrier", Chihiro J. Uchibori et al., Journal of Electronic Materials, vol. 26, No. 4, 1997. 1; Selective RIE in BC13/SF6 Plasmas for GaAs Hemt Gate Recess Etching, Y.S. Lee et al., Department of Chemical and Petroleum Engineering, University of Kansas, 2000. 1; U.S. Appl. No. 08/949,504, filed Oct. 14, 1997, Geoff W. Taylor. 1; U.S. Appl. No. 09/710,217, filed Nov. 11, 2000, Geoff W. Taylor. 1; U.S. Appl. No. 14/222,841, filed Mar. 24, 2014, Geoff W. Taylor. 1; U.S. Appl. No. 60/376,238, filed Apr. 26, 2002, Geoff W. Taylor. 1
	Citing documents		Determine documents
	Sequence listings
	Search file IPC	ICP	H01L 21/02 H01L 21/70 H01L 29/06 H01L 29/08 H01L 29/10 H01L 29/45 H01L 29/778 H01L 33/00 H01L 33/10