Bibliografische Daten

Dokument US000009590136B2 (Seiten: 62)

Bibliografische Daten Dokument US000009590136B2 (Seiten: 62)
INID Kriterium Feld Inhalt
54 Titel TI [EN] Semiconductor device for optoelectronic integrated circuits
71/73 Anmelder/Inhaber PA OPEL SOLAR INC, US ; UNIV CONNECTICUT, US
72 Erfinder IN TAYLOR GEOFF W, US
22/96 Anmeldedatum AD 11.06.2015
21 Anmeldenummer AN 201514736624
Anmeldeland AC US
Veröffentlichungsdatum PUB 07.03.2017
33
31
32		 Priorität PRC
PRN
PRD

51 IPC-Hauptklasse ICM H01L 29/06 (2006.01)
51 IPC-Nebenklasse ICS H01L 21/02 (2006.01)
H01L 21/70 (2006.01)
H01L 31/102 (2006.01)
H01L 33/00 (2010.01)
H01L 33/02 (2010.01)
H01L 33/04 (2010.01)
IPC-Zusatzklasse ICA
IPC-Indexklasse ICI
Gemeinsame Patentklassifikation CPC H01S 5/06203
H01S 5/183
H01S 5/3086
H01S 5/343
H10D 30/4732
H10D 62/116
H10D 62/149
H10D 62/357
H10D 62/85
H10D 64/62
H10H 20/013
H10H 20/0137
H10H 20/062
H10H 20/811
H10H 20/812
H10H 20/814
H10H 20/8215
H10H 20/824
MCD-Hauptklasse MCM H01L 29/06 (2006.01)
MCD-Nebenklasse MCS H01L 21/02 (2006.01)
H01L 21/70 (2006.01)
H01L 31/102 (2006.01)
H01L 33/00 (2010.01)
H01L 33/02 (2010.01)
H01L 33/04 (2010.01)
MCD-Zusatzklasse MCA
57 Zusammenfassung AB [EN] A semiconductor device includes a series of layers formed on a substrate, including a first plurality of n-type layers, a second plurality of layers that form a p-type modulation doped quantum well structure (MDQWS), a third plurality of layers disposed between the p-type MDQWS and a fourth plurality of layers that form an n-type MDQWS, and a fifth plurality of p-type layers. The first plurality of layers includes a first etch stop layer of n-type formed on an n-type contact layer. The third plurality of layers includes a second etch stop layer formed above the p-type MDQWS and a third etch stop layer formed above and offset from the second etch stop layer. The fifth plurality of layers includes a fourth etch stop layer of p-type formed above the n-type MDQWS and a fifth etch stop layer of p-type doping formed above and offset from the fourth etch stop layer.
56 Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt		 CT US000005698900A
US020030080331A1
US020040079963A1
US020040081216A1
US020060141651A1
US020060141682A1
US020060208279A1
56 Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt		 CT US000005804847A
US000006031243A
US000006479844B2
US000006841795B2
US000006849866B2
US000006853014B2
US000006870207B2
US000006873273B2
US000006954473B2
US000006995407B2
US000007332752B2
US020140050242A1
56 Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt		 CTNP
56 Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt		 CTNP "Development of Refractory Ohmic Contact Materials for Gallium Arsenide Compound Semiconductors", Masanori Murakami, Science and Technology of Advanced Materials 3 (2002) pp. 1-27. 1;
"InXGa1-XAs Ohmic Contacts to n-Type GaAs with a Tungsten Nitride Barrier", Chihiro J. Uchibori et al., Journal of Electronic Materials, vol. 26, No. 4, 1997. 1;
Selective RIE in BC13/SF6 Plasmas for GaAs Hemt Gate Recess Etching, Y.S. Lee et al., Department of Chemical and Petroleum Engineering, University of Kansas, 2000. 1;
U.S. Appl. No. 08/949,504, filed Oct. 14, 1997, Geoff W. Taylor. 1;
U.S. Appl. No. 09/710,217, filed Nov. 11, 2000, Geoff W. Taylor. 1;
U.S. Appl. No. 14/222,841, filed Mar. 24, 2014, Geoff W. Taylor. 1;
U.S. Appl. No. 60/376,238, filed Apr. 26, 2002, Geoff W. Taylor. 1
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Sequenzprotokoll
Prüfstoff-IPC ICP H01L 21/02
H01L 21/70
H01L 29/06
H01L 29/08
H01L 29/10
H01L 29/45
H01L 29/778
H01L 33/00
H01L 33/10