| 54 |
Titel |
TI |
[EN] Semiconductor component with improved robustness |
| 71/73 |
Anmelder/Inhaber |
PA |
INFINEON TECHNOLOGIES AUSTRIA, AT
;
LUTZ JOSEF, DE
;
SCHULZE HANS-JOACHIM, DE
|
| 72 |
Erfinder |
IN |
LUTZ JOSEF, DE
;
SCHULZE HANS-JOACHIM, DE
|
| 22/96 |
Anmeldedatum |
AD |
01.10.2007 |
| 21 |
Anmeldenummer |
AN |
86531607 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
15.01.2013 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
DE
102006046845
20061002
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 29/66
(2006.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H01L 29/0821
H01L 29/0878
H01L 29/36
H01L 29/41766
H01L 29/73
H01L 29/732
H01L 29/7395
H01L 29/7432
H01L 29/7802
H01L 29/861
H01L 29/87
H01L 29/872
|
|
MCD-Hauptklasse |
MCM |
H01L 29/66
(2006.01)
|
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MCD-Nebenklasse |
MCS |
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MCD-Zusatzklasse |
MCA |
|
| 57 |
Zusammenfassung |
AB |
[EN] One aspect is a semiconductor component including a terminal zone; a drift zone of a first conduction type, which is doped more weakly than the terminal zone; a component junction between the drift zone and a further component zone; and a charge carrier compensation zone of the first conduction type, which is arranged between the drift zone and the terminal zone and whose doping concentration is lower than that of the terminal zone, and whose doping concentration increases at least in sections in the direction of the terminal zone from a minimum doping concentration to a maximum doping concentration, the minimum doping concentration being more than 1016 cm−3. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
US020050133858A1
US020060286753A1
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
DE000003932490A1
DE000010053445A1
DE000010245091A1
DE000010360574A1
DE102004039209A1
DE102005009000A1
US000003872494A
US000006384431B1
US020050133857A1
US020060035436A1
US020060211179A1
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
Egawa, Hideharu, "Avalanche Characteristics and Failure Mechanism of High Voltage Diodes," IEEE Transactions on Electron Devices, vol. ED-13, No. 11, pp. 754-758 (Nov. 1966). 1;
Hower, Philip L., "Avalanche Injection and Second Breakdown in Transistors," IEEE Transactions on Electron Devices, vol. ED-17, No. 4, pp. 320-335 (Apr. 1970). 1;
Kaindl, W. et al., "Physically Based Simulation of Strong Charger Multiplication Events in Power Devices Triggered by Incident Ions," Proceedings of 2004 International Symposium on Power Semiconductor Devices & ICs, Kitakyushu, pp. 257-260 (2004). 1;
Soelkner, G. et al., "Charge Carrier Avalanche Multiplication in High-Voltage Diodes Triggered by Ionizing Radiation," IEEE Transactions on Nuclear Science, vol. 47, No. 6, pp. 2365-2372 (Dec. 2000). 1
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