Bibliografische Daten

Dokument US000008054110B2 (Seiten: 24)

Bibliografische Daten Dokument US000008054110B2 (Seiten: 24)
INID Kriterium Feld Inhalt
54 Titel TI [EN] Driver circuit for gallium nitride (GaN) heterojunction field effect transistors (HFETs)
71/73 Anmelder/Inhaber PA UNIV SOUTH CAROLINA, US
72 Erfinder IN BAKOS JASON, US ; MONTI ANTONELLO, US ; RIVA MARCO, IT ; WANG BO, US
22/96 Anmeldedatum AD 20.01.2010
21 Anmeldenummer AN 69049510
Anmeldeland AC US
Veröffentlichungsdatum PUB 08.11.2011
33
31
32		 Priorität PRC
PRN
PRD		 US
20531609
20.01.2009
33
31
32		 PRC
PRN
PRD		 US
21161209
01.04.2009
51 IPC-Hauptklasse ICM H03B 1/00 (2006.01)
51 IPC-Nebenklasse ICS H03K 3/00 (2006.01)
IPC-Zusatzklasse ICA
IPC-Indexklasse ICI
Gemeinsame Patentklassifikation CPC H03K 19/018521
MCD-Hauptklasse MCM H03B 1/00 (2006.01)
MCD-Nebenklasse MCS H03K 3/00 (2006.01)
MCD-Zusatzklasse MCA
57 Zusammenfassung AB [EN] A driver circuit and integrated circuit implementation of a driver circuit for driving a GaN HFET device is disclosed. The driver circuit includes a resonant drive circuit having an LC circuit with an inductance and a capacitance. The capacitance of the LC circuit includes the gate-source capacitance of the GaN HFET device. The driver circuit further includes a level shifter circuit configured to receive a first signal and to amplify the first signal to a second signal suitable for driving a GaN HFET device. The resonant drive circuit is controlled based at least in part on the second signal such that the resonant drive circuit provides a first voltage to the GaN HFET device to control the GaN HFET device to operate in a conducting state and to provide a second voltage to the GaN HFET device to control the GaN HFET device to operate in a non-conducting state.
56 Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt		 CT US000007843237B2
56 Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt		 CT US000004724342A
56 Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt		 CTNP
56 Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt		 CTNP B. Wang, M. Riva, J. Bakos, A. Monti, "Integrated Circuit Implementation for a GaN HFETs Driver Circuit", Applied Power Electronic Conference (APEC), 2008, pp. 1-6. 1;
B.Wang, N. Tipirneni, M.Riva, A.Monti, G.Simin, E,Santi, "An efficient, High-frequency Drive Circuit for GaN power HFETs", IEEE Transactions on Industry Applications, vol. 45, No. 2, Mar./Apr. 2009, pp. 843-853. 1;
Chen, F.C. Lee, L. Amoroso, Ho-Pu Wu, "A Resonant MOSFET Gate Driver With Efficient Energy Recovery", IEEE Transaction on Power Electronics, vol. 19, No. 2, Mar. 2004 pp. 470-477. 1;
H. Ballan, High-voltage Devices and Circuits in standard CMOS Technologies, PhD Thesis EPFL,1997. 1;
Richard. M. Forsyth, "Technology and Design of integrated circuits for up to 50Vapplications", austria microsystems AG, Schloss Premstaetton, Unterpremstaetten, Austria, 2003 IEEE, pp. 7-13. 1
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