Bibliographic data

Document US000007576410B2 (Pages: 8)

Bibliographic data Document US000007576410B2 (Pages: 8)
INID Criterion Field Contents
54 Title TI [EN] Power transistor
71/73 Applicant/owner PA INFINEON TECHNOLOGIES AG, DE
72 Inventor IN RUEB MICHAEL, AT ; SCHMIDT GERHARD, AT
22/96 Application date AD Sep 28, 2006
21 Application number AN 52882106
Country of application AC US
Publication date PUB Aug 18, 2009
33
31
32		 Priority data PRC
PRN
PRD		 DE
102005046427
20050928
51 IPC main class ICM H01L 21/8238 (2006.01)
51 IPC secondary class ICS
IPC additional class ICA
IPC index class ICI
Cooperative patent classification CPC B82Y 10/00
H10D 30/43
H10D 30/63
H10D 62/111
H10D 62/118
H10D 62/121
H10D 62/122
H10D 64/661
H10D 64/671
H10D 84/811
H10K 10/466
H10K 85/225
Y10S 977/938
MCD main class MCM H01L 21/8238 (2006.01)
MCD secondary class MCS
MCD additional class MCA
57 Abstract AB [EN] A power transistor has a source region, a drain region, a semiconductor body arranged between the source region and the drain region, and a plurality of nanotubes. The plurality of nanotubes are connected in parallel and disposed in the semiconductor body such that the plurality of nanotubes are electrically insulated from the semiconductor body and electrically connect the source and drain regions of the transistor. The power transistor also includes at least one diode formed in the semiconductor body. A portion of the at least one diode formed in the semiconductor body is configured to act as a gate electrode for the transistor.
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56 Cited non-patent literature identified in the search CTNP
56 Cited non-patent literature indicated by the applicant CTNP
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