Bibliographic data

Document US000007132726B2 (Pages: 11)

Bibliographic data Document US000007132726B2 (Pages: 11)
INID Criterion Field Contents
54 Title TI [EN] Integrated semiconductor circuit having a logic and power metallization without intermetal dielectric
71/73 Applicant/owner PA INFINEON TECHNOLOGIES AG, DE
72 Inventor IN DETZEL THOMAS, AT ; RUEB MICHAEL, AT
22/96 Application date AD Jan 18, 2005
21 Application number AN 3727305
Country of application AC US
Publication date PUB Nov 7, 2006
33
31
32
Priority data PRC
PRN
PRD
DE
102004003538
20040123
51 IPC main class ICM H01L 29/00 (2006.01)
51 IPC secondary class ICS H01L 23/52 (2006.01)
IPC additional class ICA
IPC index class ICI
Cooperative patent classification CPC H01L 23/528
H01L 23/5283
H01L 29/41741
H01L 29/41758
H01L 29/456
H01L 29/7801
H01L 29/7802
H01L 2924/0002
MCD main class MCM H01L 29/00 (2006.01)
MCD secondary class MCS H01L 21/336 (2006.01)
H01L 21/768 (2006.01)
H01L 23/522 (2006.01)
H01L 23/528 (2006.01)
H01L 23/52 (2006.01)
H01L 31/113 (2006.01)
MCD additional class MCA H01L 29/417 (2006.01)
H01L 29/45 (2006.01)
H01L 29/78 (2006.01)
57 Abstract AB [EN] An integrated semiconductor circuit having a first and a second portion of a substrate, in which a power semiconductor circuit structure and a logic circuit structure are respectively formed. The metallization having a power metal layer and an in relative terms thinner logic metal layer, the two metal layers being located directly above one another in this order, without an intermetal dielectric between them, only in the first portion above the power semiconductor circuit structure, and an uninterrupted conductive barrier layer being located at least between the power metal layer and the intermediate oxide layer and also between the power metal layer and the contact regions and electrode portions of the power semiconductor circuit structure which it contact-connects, and to a method for fabricating it.
56 Cited documents identified in the search CT US000004807007A
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56 Cited documents indicated by the applicant CT US000004718977A
56 Cited non-patent literature identified in the search CTNP
56 Cited non-patent literature indicated by the applicant CTNP
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