| 54 |
Title |
TI |
[EN] Method for doping a semiconductor body |
| 71/73 |
Applicant/owner |
PA |
INFINEON TECHNOLOGIES AG, DE
|
| 72 |
Inventor |
IN |
RUEB MICHAEL, AT
|
| 22/96 |
Application date |
AD |
Dec 23, 2003 |
| 21 |
Application number |
AN |
74593303 |
|
Country of application |
AC |
US |
|
Publication date |
PUB |
Aug 15, 2006 |
33
31
32 |
Priority data |
PRC
PRN
PRD |
DE
10260644
20021223
|
| 51 |
IPC main class |
ICM |
H01L 21/425
(2006.01)
|
| 51 |
IPC secondary class |
ICS |
|
|
IPC additional class |
ICA |
|
|
IPC index class |
ICI |
|
|
Cooperative patent classification |
CPC |
H01L 21/263
H01L 21/26506
H01L 21/268
|
|
MCD main class |
MCM |
H01L 21/425
(2006.01)
|
|
MCD secondary class |
MCS |
H01L 21/265
(2006.01)
H01L 21/268
(2006.01)
|
|
MCD additional class |
MCA |
|
| 57 |
Abstract |
AB |
[EN] The invention relates to a method for doping a semiconductor body ( 2 ), in which an n-type doping is introduced into the semiconductor body, which is initially p-doped, for example, by means of ion irradiation preferably with protons, which n-type doping is then cancelled by the action of a laser beam ( 8 ) in specific regions ( 9 ) so that the original p-type doping is present in said regions ( 9 ). |
| 56 |
Cited documents identified in the search |
CT |
US000004522657A
|
| 56 |
Cited documents indicated by the applicant |
CT |
DE000010018371A1
DE000010025567A1
|
| 56 |
Cited non-patent literature identified in the search |
CTNP |
|
| 56 |
Cited non-patent literature indicated by the applicant |
CTNP |
|
|
Citing documents |
|
Determine documents
|
|
Sequence listings |
|
|
|
Search file IPC |
ICP |
H01L 21/425
|
