| 54 |
Title |
TI |
[EN] Method for manufacturing a semiconductor component |
| 71/73 |
Applicant/owner |
PA |
INFINEON TECHNOLOGIES AG, DE
|
| 72 |
Inventor |
IN |
DEBOY GERALD, DE
;
FRIZA WOLFGANG, AT
;
HAEBERLEN OLIVER, AT
;
RUEB MICHAEL, AT
;
STRACK HELMUT, DE
|
| 22/96 |
Application date |
AD |
Mar 26, 2001 |
| 21 |
Application number |
AN |
81759401 |
|
Country of application |
AC |
US |
|
Publication date |
PUB |
Nov 18, 2003 |
33
31
32 |
Priority data |
PRC
PRN
PRD |
DE
19843959
Sep 24, 1998
|
33
31
32 |
PRC
PRN
PRD |
DE
9903081
Sep 24, 1999
|
| 51 |
IPC main class |
ICM |
H01L 21/338
|
| 51 |
IPC secondary class |
ICS |
H01L 21/8236
H01L 21/8242
|
|
IPC additional class |
ICA |
|
|
IPC index class |
ICI |
|
|
Cooperative patent classification |
CPC |
H01L 21/26586
H10D 30/60
H10D 30/66
H10D 62/106
H10D 62/107
H10D 62/111
H10D 62/115
H10D 62/116
H10D 62/393
H10D 64/256
|
|
MCD main class |
MCM |
|
|
MCD secondary class |
MCS |
H01L 21/336
(2006.01)
H01L 29/06
(2006.01)
H01L 29/10
(2006.01)
H01L 29/78
(2006.01)
|
|
MCD additional class |
MCA |
H01L 21/265
(2006.01)
|
| 57 |
Abstract |
AB |
[EN] The invention relates to a method for producing a semiconductor component including semiconductor areas of different conductivity types which are alternately positioned in a semiconductor body. The semiconductor areas of different conductivity types extend at least from one first zone to a position near a second zone. Because of variable doping in trenches and in the trench fillings, an electric field is generated which increases from both the first zone and the second zone. |
| 56 |
Cited documents identified in the search |
CT |
US000005021355A
US000005384152A
|
| 56 |
Cited documents indicated by the applicant |
CT |
DE000004309764A1
DE000019736981A1
US000005216275A
US000005438215A
WO001997029518A1
|
| 56 |
Cited non-patent literature identified in the search |
CTNP |
|
| 56 |
Cited non-patent literature indicated by the applicant |
CTNP |
Chen Xingbi: "Theory of a Novel Voltage Sustaning (CB) Layer for Power Devices", Chinese Journal of Electronics, vol. 7, No. 3, Jul. 1998, pp. 211-216. 1
|
|
Citing documents |
|
Determine documents
|
|
Sequence listings |
|
|
|
Search file IPC |
ICP |
H01L 21/336
|
