| 54 |
Title |
TI |
[EN] METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT |
| 71/73 |
Applicant/owner |
PA |
INFINEON TECHNOLOGIES AG
|
| 72 |
Inventor |
IN |
DEBOY GERALD
;
STRACK HELMUT
;
HAEBERLEN OLIVER
;
RUEB MICHAEL
;
FRIZA WOLFGANG
|
| 22/96 |
Application date |
AD |
Mar 24, 2001 |
| 21 |
Application number |
AN |
20017003803 |
|
Country of application |
AC |
KR |
|
Publication date |
PUB |
Aug 9, 2001 |
33
31
32 |
Priority data |
PRC
PRN
PRD |
DE
19843959
Sep 24, 1998
|
33
31
32 |
PRC
PRN
PRD |
DE
9903081
Sep 24, 1999
|
| 51 |
IPC main class |
ICM |
H01L 29/78
(2006.01)
|
| 51 |
IPC secondary class |
ICS |
|
|
IPC additional class |
ICA |
|
|
IPC index class |
ICI |
|
|
Cooperative patent classification |
CPC |
H01L 21/26586
H10D 30/60
H10D 30/66
H10D 62/106
H10D 62/107
H10D 62/111
H10D 62/115
H10D 62/116
H10D 62/393
H10D 64/256
|
|
MCD main class |
MCM |
|
|
MCD secondary class |
MCS |
H01L 21/336
(2006.01)
H01L 29/06
(2006.01)
H01L 29/10
(2006.01)
H01L 29/78
(2006.01)
|
|
MCD additional class |
MCA |
H01L 21/265
(2006.01)
|
| 57 |
Abstract |
AB |
[EN] The invention relates to a method for producing a semiconductor component comprising semiconductor areas (4, 5) of different conductivity types which are alternately positioned in a semiconductor body and in said semiconductor body (1) extend at least from one first zone (6) to near a second zone (1) and by way of variable dopage from trenches (11, 14) and their fillings generate an electric field which increases from both said zones (6, 1). © KIPO & WIPO 2007 |
| 56 |
Cited documents identified in the search |
CT |
|
| 56 |
Cited documents indicated by the applicant |
CT |
|
| 56 |
Cited non-patent literature identified in the search |
CTNP |
|
| 56 |
Cited non-patent literature indicated by the applicant |
CTNP |
|
|
Citing documents |
|
Determine documents
|
|
Sequence listings |
|
|
|
Search file IPC |
ICP |
|
