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Document DE000010260644B3 (Pages: 8)

Bibliographic data Document DE000010260644B3 (Pages: 8)
INID Criterion Field Contents
54 Title TI [DE] Verfahren zum Dotieren eines Halbleiterkörpers
[EN] Doping a semiconductor body used for production of compensation components in high voltage elements comprises implanting doping centers of ions producing a conducting type in the semiconductor body, and heat treating
71/73 Applicant/owner PA Infineon Technologies AG, 81669 München, DE
72 Inventor IN Rüb, Michael, Dr., Faak am See, AT
22/96 Application date AD Dec 23, 2002
21 Application number AN 10260644
Country of application AC DE
Publication date PUB Mar 18, 2004
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Priority data PRC
PRN
PRD


51 IPC main class ICM H01L 21/265
51 IPC secondary class ICS H01L 21/268
IPC additional class ICA
IPC index class ICI
Cooperative patent classification CPC H01L 21/263
H01L 21/26506
H01L 21/268
MCD main class MCM
MCD secondary class MCS H01L 21/265 (2006.01)
H01L 21/268 (2006.01)
MCD additional class MCA
57 Abstract AB [DE] Die Erfindung betrifft ein Verfahren zum Dotieren eines Halbleiterkörpers (2), bei dem in den zunächst beispielsweise p-dotierten Halbleiterkörper durch Ionenbestrahlung vorzugsweise mit Protonen eine n-Dotierung eingebracht wird, die dann durch Einwirkung eines Laserstrahles (8) in bestimmten Bereichen (9) gelöscht wird, so dass in diesen Bereichen (9) die ursprüngliche p-Dotierung vorliegt.
[EN] Doping a semiconductor body (1, 2) comprises implanting doping centers of the ions (6) producing a conducting type in the semiconductor body, and heat treating using ion radiation so that doping of the conducting type prevails in the semiconductor body. Further heat treatment is carried out in determined regions in the semiconductor body at a higher temperature than that of the first heat treatment.
56 Cited documents identified in the search CT DE000010018371A1
DE000010025567A1
56 Cited documents indicated by the applicant CT
56 Cited non-patent literature identified in the search CTNP
56 Cited non-patent literature indicated by the applicant CTNP
Citing documents Determine documents
Sequence listings
Search file IPC ICP H01L 21/265
H01L 21/425