Bibliographic data

Document KR102001074945A (Pages: 30)

Bibliographic data Document KR102001074945A (Pages: 30)
INID Criterion Field Contents
54 Title TI [EN] HIGH-VOLTAGE SEMICONDUCTOR COMPONENT
71/73 Applicant/owner PA SIEMENS AKTIENGESELLSCHAFT
72 Inventor IN DEBOY GERALD ; STENGL JENS PEER ; STRACK HELMUT ; WEBER HANS ; GRAF HEIMO ; RUEB MICHAEL ; AHLERS DIRK
22/96 Application date AD Mar 2, 2001
21 Application number AN 20017002794
Country of application AC KR
Publication date PUB Aug 9, 2001
33
31
32
Priority data PRC
PRN
PRD
DE
19840032
19980902
51 IPC main class ICM H01L 29/772 (2006.01)
51 IPC secondary class ICS
IPC additional class ICA
IPC index class ICI
Cooperative patent classification CPC H01L 29/0634
H01L 29/0696
H01L 29/1095
H01L 29/41766
H01L 29/4232
H01L 29/4236
H01L 29/4238
H01L 29/772
H01L 29/7801
H01L 29/7802
H01L 29/7811
H01L 29/7816
H01L 29/7825
MCD main class MCM
MCD secondary class MCS H01L 21/336 (2006.01)
H01L 29/06 (2006.01)
H01L 29/78 (2006.01)
MCD additional class MCA H01L 29/417 (2006.01)
H01L 29/423 (2006.01)
57 Abstract AB [EN] A semiconductor component has a semiconductor body comprising a blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode. The side of the zone of the second conductivity type facing the drain zone forms a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, comprises areas of the first and second conductivity type nested in one another. The second surface is positioned at a distance from the drain zone such that the areas of the first and second conductivity type nested in each other do not reach the drain zone.
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56 Cited non-patent literature indicated by the applicant CTNP
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