54 |
Titel |
TI |
[EN] SEMICONDUCTOR DIODE RESISTIVE TO SURGE CURRENT WITH SOFT RECOVERY BEHAVIOR, AND METHOD OF MANUFACTURING THE SAME |
71/73 |
Anmelder/Inhaber |
PA |
INFINEON TECHNOLOGIES AUSTRIA
|
72 |
Erfinder |
IN |
BABURSKE ROMAN
;
LUTZ JOSEF
;
SCHULZE HANS-JOACHIM
;
SIEMIENIEC RALF
|
22/96 |
Anmeldedatum |
AD |
27.09.2010 |
21 |
Anmeldenummer |
AN |
2010214783 |
|
Anmeldeland |
AC |
JP |
|
Veröffentlichungsdatum |
PUB |
28.04.2011 |
33 31 32 |
Priorität |
PRC PRN PRD |
DE
102009047808
20090930
|
51 |
IPC-Hauptklasse |
ICM |
H01L 29/861
(2006.01)
|
51 |
IPC-Nebenklasse |
ICS |
H01L 21/329
(2006.01)
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H01L 29/0623
H01L 29/66136
H01L 29/73
H01L 29/861
H01L 29/8611
H01L 2924/0002
|
|
MCD-Hauptklasse |
MCM |
H01L 29/861
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
H01L 21/329
(2006.01)
|
|
MCD-Zusatzklasse |
MCA |
|
57 |
Zusammenfassung |
AB |
[EN] <P>PROBLEM TO BE SOLVED: To provide a semiconductor device resistive to a surge current with soft recovery behavior, and to provide a method of manufacturing the same. <P>SOLUTION: A bipolar-semiconductor constituent element 100, especially a diode, includes an anode configuration controlling emitter efficiency through a method depending on a current density so as to get lower at a current density with a small emitter efficiency and get higher at a current density with a large emitter efficiency, and an option cathode configuration capable of injecting an additional hole during commutation. The method is also disclosed for manufacturing the same. <P>COPYRIGHT: (C)2011,JPO&INPIT |
56 |
Entgegengehaltene Patentdokumente/Zitate, in Recherche ermittelt |
CT |
JP0000S6074582A JP000H06177404A JP002007281231A
|
56 |
Entgegengehaltene Patentdokumente/Zitate, vom Anmelder genannt |
CT |
|
56 |
Entgegengehaltene Nichtpatentliteratur/Zitate, in Recherche ermittelt |
CTNP |
|
56 |
Entgegengehaltene Nichtpatentliteratur/Zitate, vom Anmelder genannt |
CTNP |
|
|
Zitierende Dokumente |
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Dokumente ermitteln
|
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Sequenzprotokoll |
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Prüfstoff-IPC |
ICP |
H01L 21/329
H01L 23/62
H01L 29/06
H01L 29/861
|