| 54 |
Titel |
TI |
[DE] STROMMESSVERFAHREN UND LEISTUNGSMODUL
[EN] CURRENT MEASURING METHOD AND POWER MODULE
[FR] PROCÉDÉ DE MESURE DE COURANT ET MODULE DE PUISSANCE |
| 71/73 |
Anmelder/Inhaber |
PA |
AIRBUS OPERATIONS SAS, FR
;
AIRBUS SAS, FR
|
| 72 |
Erfinder |
IN |
GALEK MAREK, FR
;
GALLA GOWTHAM, FR
;
KAPAUN FLORIAN, FR
;
KLUGBAUER JOSEF, FR
;
STEINER GERHARD, FR
;
SURAPANENI RAVI KIRAN, FR
|
| 22/96 |
Anmeldedatum |
AD |
10.08.2023 |
| 21 |
Anmeldenummer |
AN |
23190907 |
|
Anmeldeland |
AC |
EP |
|
Veröffentlichungsdatum |
PUB |
12.02.2025 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
|
| 51 |
IPC-Hauptklasse |
ICM |
G01R 19/00
(2006.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
H02M 1/00
(2006.01)
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
G01R 19/0092
G01R 31/2644
H02M 1/0009
H02M 7/5387
|
|
MCD-Hauptklasse |
MCM |
G01R 19/00
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
H02M 1/00
(2006.01)
|
|
MCD-Zusatzklasse |
MCA |
|
| 57 |
Zusammenfassung |
AB |
[EN] The invention relates to the field of power electronics. In order to enable a high speed and accurate current measuring in a power module (14) without influencing the power module (14) itself, the invention provides a current measuring method for measuring current in an electrical power module (14) comprising measuring the current over a parasitic element (22, L1-L4) of the power module (14). |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
CAIRNIE MARK ET AL: "Gate Driver for 10 kV SiC MOSFET Power Module with High-Speed Current Sensing", 2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), IEEE, 10 October 2021 (2021-10-10), pages 5385 - 5392, XP034020086, DOI: 10.1109/ECCE47101.2021.9595981 0;
SUN KEYAO ET AL: "Design, Analysis, and Discussion of Short Circuit and Overload Gate-Driver Dual-Protection Scheme for 1.2-kV, 400-A SiC MOSFET Modules", IEEE TRANSACTIONS ON POWER ELECTRONICS, INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, USA, vol. 35, no. 3, 1 March 2020 (2020-03-01), pages 3054 - 3068, XP011761791, ISSN: 0885-8993, [retrieved on 20191219], DOI: 10.1109/TPEL.2019.2930048 0
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
|
Zitierende Dokumente |
|
keine Treffer
|
|
Sequenzprotokoll |
|
|
|
Prüfstoff-IPC |
ICP |
|
