Bibliographic data

Document EP000001454392A1 (Pages: 1)

Bibliographic data Document EP000001454392A1 (Pages: 1)
INID Criterion Field Contents
54 Title TI [DE] VERFAHREN UND VORRICHTUNG ZUR ERZEUGUNG VON LASERSTRAHLUNG AUF BASIS VON HALBLEITERN
[EN] METHOD AND DEVICE FOR PRODUCING LASER RADIATION BASED ON SEMICONDUCTORS
[FR] PROCEDE ET DISPOSITIF DE PRODUCTION DE RAYONNEMENT LASER SUR LA BASE DE SEMI-CONDUCTEURS
71/73 Applicant/owner PA UNIV POTSDAM, DE
72 Inventor IN MENZEL RALF, DE ; RAAB VOLKER, DE
22/96 Application date AD Nov 6, 2002
21 Application number AN 02792737
Country of application AC EP
Publication date PUB Sep 8, 2004
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31
32		 Priority data PRC
PRN
PRD		 DE
10161076
Dec 12, 2001
33
31
32		 PRC
PRN
PRD		 EP
0212400
Nov 6, 2002
51 IPC main class ICM H01S 5/14
51 IPC secondary class ICS
IPC additional class ICA
IPC index class ICI
Cooperative patent classification CPC H01S 3/0818
H01S 5/14
H01S 5/141
H01S 5/142
H01S 5/2036
MCD main class MCM
MCD secondary class MCS H01S 5/022 (2006.01)
H01S 5/14 (2006.01)
MCD additional class MCA
57 Abstract AB [EN] In a device and method for generating laser radiation based on semiconductors, with which laser light of a high beam quality can be produced, the device producing laser radiation has a reflective element, which has no influence on the divergence of the light exiting the semiconductor and is placed at a distance from the semiconductor at which the arrangement forms an external unstable resonator, the divergent light exiting the semiconductor.
56 Cited documents identified in the search CT
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56 Cited non-patent literature identified in the search CTNP
56 Cited non-patent literature indicated by the applicant CTNP
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