| 54 |
Title |
TI |
[DE] Halbleiterbauelement mit erhöhter Durchbruchspannung sowie dazugehöriges Herstellungsverfahren
[EN] High breakdown voltage semiconductor device and process for fabricating the same
[FR] Dispositif semi-conducteur à tension de claquage élevée et procédé pour sa fabrication |
| 71/73 |
Applicant/owner |
PA |
INFINEON TECHNOLOGIES AG, DE
|
| 72 |
Inventor |
IN |
AHLERS DIRK DR, DE
;
DEBOY GERALD DR, DE
;
MARION MIGUEL CUADRON, DE
;
RUEB MICHAEL DR, AT
;
STENGL JENS-PETER, DE
;
WEBER HANS DR, DE
;
WILLMEROTH ARMIN, DE
|
| 22/96 |
Application date |
AD |
Nov 14, 2001 |
| 21 |
Application number |
AN |
01127071 |
|
Country of application |
AC |
EP |
|
Publication date |
PUB |
Jun 12, 2002 |
33
31
32 |
Priority data |
PRC
PRN
PRD |
DE
10061310
20001208
|
| 51 |
IPC main class |
ICM |
H01L 29/06
|
| 51 |
IPC secondary class |
ICS |
H01L 29/78
|
|
IPC additional class |
ICA |
|
|
IPC index class |
ICI |
|
|
Cooperative patent classification |
CPC |
H01L 29/0619
H01L 29/0634
H01L 29/0696
H01L 29/1095
H01L 29/41766
H01L 29/7802
H01L 29/7811
|
|
MCD main class |
MCM |
H01L 29/06
(2006.01)
|
|
MCD secondary class |
MCS |
H01L 21/336
(2006.01)
H01L 29/78
(2006.01)
|
|
MCD additional class |
MCA |
H01L 29/10
(2006.01)
|
| 57 |
Abstract |
AB |
[DE] Die Erfindung betrifft ein Halbleiterbauelement mit erhöhter Durchbruchspannung mit einer aktiven Struktur (AS) und einer Randstruktur (RS). Eine Vielzahl von ersten und zweiten Rand-Kompensationsgebieten (2 und 3) sind hierbei derart in der Randstruktur ausgebildet, dass die zweiten Rand-Kompensationsgebiete (3) vollständig von Ladungsträgern ausgeräumt werden und eine Kompensationsfeldstärke in der Randstruktur (RS) geringer ist als eine Kompensationsfeldstärke in einem aktiven Struktur (AS) des Halbleiterbauelements. <IMAGE>
[EN] The device has an active structure and an edge structure with edge compensation areas and floating edge compensation areas with edge compensation zones. Certain areas are fully depleted of charge carriers before reaching breakdown voltage. The compensation field strength in the edge structure is lower than that in an active area. The device has an active structure (AS) with a blocking pn-junction in a semiconducting substrate, a first zone (6) of a first conductor type connected to a first electrode (S) and bounding on a zone of opposite type forming the junction blocking zone (7) also connected to the first electrode, a second zone (1) of first type connected to a second electrode (D) and compensation areas (3') nested between the first and second zones. An edge structure (RS) has a number of first edge compensation areas (2) of the first type and a number of floating edge compensation areas (3) of the second type with edge compensation zones (4) and nested with the first areas so that the second areas are fully depleted of charge carriers before reaching the breakdown voltage. The compensation field strength in the edge structure is lower than that in an active area. Independent claims are also included for the following: a method of manufacturing a semiconducting component. |
| 56 |
Cited documents identified in the search |
CT |
|
| 56 |
Cited documents indicated by the applicant |
CT |
DE000019954352A1
WO002000014807A1
|
| 56 |
Cited non-patent literature identified in the search |
CTNP |
|
| 56 |
Cited non-patent literature indicated by the applicant |
CTNP |
DRUCKSCHRIFT STENGL ET AL.: "Variation of Lateral Doping - A New Concept to Avoid High Voltage Breakdown of Planar Junctions", INTERNATIONAL ELECTRON DEVICES MEETING, WASHINGTON, 1 December 1985 (1985-12-01), pages 154 - 157 1
|
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Citing documents |
|
Determine documents
|
|
Sequence listings |
|
|
|
Search file IPC |
ICP |
H01L 29/06 E
H01L 29/78
|
