| 54 |
Title |
TI |
[DE] Verfahren zum Herstellen von Silizium-basierenden er Verwendung von Silizium-enthaltenden Tinten
[EN] Manufacture of silicon-based layer involves applying silicon nanoparticles-containing suspension on substrate, applying silicon-based compound-precursor solution containing organohalosilane compound, and further applying silicon-based ink |
| 71/73 |
Applicant/owner |
PA |
Freitag, Hans, 09128, Chemnitz, DE
;
Technische Universität Chemnitz, 09126, Chemnitz, DE
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| 72 |
Inventor |
IN |
Buschbeck, Roy, Dr., 09518, Großrückerswalde, DE
;
Freitag, Hans, 09128, Chemnitz, DE
;
Jakob, Alexander, Dr., 08132, Mülsen, DE
;
Lang, Heinrich, Prof., 09125, Chemnitz, DE
;
Zahn, Dietrich R. T., Prof., 08396, Waldenburg, DE
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| 22/96 |
Application date |
AD |
Sep 2, 2010 |
| 21 |
Application number |
AN |
102010037278 |
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Country of application |
AC |
DE |
|
Publication date |
PUB |
Mar 8, 2012 |
33
31
32 |
Priority data |
PRC
PRN
PRD |
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| 51 |
IPC main class |
ICM |
C23C 18/00
(2006.01)
|
| 51 |
IPC secondary class |
ICS |
H01L 31/0392
(2006.01)
H01L 31/18
(2006.01)
|
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IPC additional class |
ICA |
|
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IPC index class |
ICI |
|
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Cooperative patent classification |
CPC |
B82Y 30/00
C23C 18/1204
C23C 18/122
C23C 18/127
C23C 18/1275
C23C 18/143
H01L 31/182
Y02P 70/50
|
|
MCD main class |
MCM |
C23C 18/00
(2006.01)
|
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MCD secondary class |
MCS |
H01L 31/0392
(2006.01)
H01L 31/18
(2006.01)
|
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MCD additional class |
MCA |
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| 57 |
Abstract |
AB |
[DE] Die vorliegende Erfindung betrifft ein Verfahren zum Herstellen wenigstens einer Silizium-basierenden Schicht oder wenigstens einer Silizium-basierenden Struktur auf einem starren oder flexiblen Substrat, umfassend die Schritte: Bereitstellen eines Substrates; Herstellen einer speziellen Silizium-basierenden Tinte; Aufbringen der Silizium-basierenden Tinte auf das Substrat unter gegenüber Atmosphärendruck vermindertem Druck oder in Inertatmosphäre, und Energieeintrag in die Schicht.
[EN] Silicon nanoparticles-containing suspension is applied on a substrate, and a silicon-based compound-precursor solution containing organohalosilane compound (I) is further applied on the substrate. The silicon-based ink is applied on substrate under atmospheric pressure or inert atmosphere, and energy is applied to obtain silicon-based layer. Silicon nanoparticles-containing suspension is applied on a substrate, and a silicon-based compound-precursor solution containing organohalosilane compound of formula: R'RSiX 2(I) is further applied on the substrate. The silicon-based ink is applied on substrate under atmospheric pressure or inert atmosphere, and energy is applied to obtain silicon-based layer. R,R' : H, chloro, bromo or organic residue, in which R and R' are not simultaneously same;and X : chloro or bromo. |
| 56 |
Cited documents identified in the search |
CT |
US000006527847B1
US020050145163A1
US020090071539A1
|
| 56 |
Cited documents indicated by the applicant |
CT |
US000004159259A
|
| 56 |
Cited non-patent literature identified in the search |
CTNP |
Bley, R.A.; Kauzlarich, S.M.: A Low-Temperature Solution Phase Route for the Synthesis of Silicon Nanoclusters. In: Journal of the American Chemical Society, 118, 1996, 12461-12462. p 0;
Heath, J.R.: A Liquid-Solution-Phase Synthesis of Crystalline Silicon. In: Science, 258, 1992, 1131-1133. p 0;
Li, X.; He, Y.; Swihart, M.T.: Surface Functionalization of Silicon Nanoparticles Produced by Laser-Driven Pyrolysis of Silane followed by HF-HNO3 Etching. In: Langmuir, 20, 2004, 4720-4727. p 0
|
| 56 |
Cited non-patent literature indicated by the applicant |
CTNP |
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Wielage et al., J. Mater. Proc. Techn. 2003, 132, 313 1;
Zhang et al., Nanotechnology 2007, 095601 1
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Search file IPC |
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C23C 18/00
H01L 31/0392
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