54 |
Titel |
TI |
[DE] Verfahren zum Herstellen von Silizium-basierenden er Verwendung von Silizium-enthaltenden Tinten [EN] Manufacture of silicon-based layer involves applying silicon nanoparticles-containing suspension on substrate, applying silicon-based compound-precursor solution containing organohalosilane compound, and further applying silicon-based ink |
71/73 |
Anmelder/Inhaber |
PA |
Freitag, Hans, 09128, Chemnitz, DE
;
Technische Universität Chemnitz, 09126, Chemnitz, DE
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72 |
Erfinder |
IN |
Buschbeck, Roy, Dr., 09518, Großrückerswalde, DE
;
Freitag, Hans, 09128, Chemnitz, DE
;
Jakob, Alexander, Dr., 08132, Mülsen, DE
;
Lang, Heinrich, Prof., 09125, Chemnitz, DE
;
Zahn, Dietrich R. T., Prof., 08396, Waldenburg, DE
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22/96 |
Anmeldedatum |
AD |
02.09.2010 |
21 |
Anmeldenummer |
AN |
102010037278 |
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Anmeldeland |
AC |
DE |
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Veröffentlichungsdatum |
PUB |
08.03.2012 |
33 31 32 |
Priorität |
PRC PRN PRD |
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51 |
IPC-Hauptklasse |
ICM |
C23C 18/00
(2006.01)
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51 |
IPC-Nebenklasse |
ICS |
H01L 31/0392
(2006.01)
H01L 31/18
(2006.01)
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IPC-Zusatzklasse |
ICA |
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IPC-Indexklasse |
ICI |
|
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Gemeinsame Patentklassifikation |
CPC |
B82Y 30/00
C23C 18/1204
C23C 18/122
C23C 18/127
C23C 18/1275
C23C 18/143
H01L 31/182
Y02P 70/50
|
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MCD-Hauptklasse |
MCM |
C23C 18/00
(2006.01)
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MCD-Nebenklasse |
MCS |
H01L 31/0392
(2006.01)
H01L 31/18
(2006.01)
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MCD-Zusatzklasse |
MCA |
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57 |
Zusammenfassung |
AB |
[DE] Die vorliegende Erfindung betrifft ein Verfahren zum Herstellen wenigstens einer Silizium-basierenden Schicht oder wenigstens einer Silizium-basierenden Struktur auf einem starren oder flexiblen Substrat, umfassend die Schritte: Bereitstellen eines Substrates; Herstellen einer speziellen Silizium-basierenden Tinte; Aufbringen der Silizium-basierenden Tinte auf das Substrat unter gegenüber Atmosphärendruck vermindertem Druck oder in Inertatmosphäre, und Energieeintrag in die Schicht. [EN] Silicon nanoparticles-containing suspension is applied on a substrate, and a silicon-based compound-precursor solution containing organohalosilane compound (I) is further applied on the substrate. The silicon-based ink is applied on substrate under atmospheric pressure or inert atmosphere, and energy is applied to obtain silicon-based layer. Silicon nanoparticles-containing suspension is applied on a substrate, and a silicon-based compound-precursor solution containing organohalosilane compound of formula: R'RSiX 2(I) is further applied on the substrate. The silicon-based ink is applied on substrate under atmospheric pressure or inert atmosphere, and energy is applied to obtain silicon-based layer. R,R' : H, chloro, bromo or organic residue, in which R and R' are not simultaneously same;and X : chloro or bromo. |
56 |
Entgegengehaltene Patentdokumente/Zitate, in Recherche ermittelt |
CT |
US000006527847B1 US020050145163A1 US020090071539A1
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56 |
Entgegengehaltene Patentdokumente/Zitate, vom Anmelder genannt |
CT |
US000004159259A
|
56 |
Entgegengehaltene Nichtpatentliteratur/Zitate, in Recherche ermittelt |
CTNP |
Bley, R.A.; Kauzlarich, S.M.: A Low-Temperature Solution Phase Route for the Synthesis of Silicon Nanoclusters. In: Journal of the American Chemical Society, 118, 1996, 12461-12462. p 0; Heath, J.R.: A Liquid-Solution-Phase Synthesis of Crystalline Silicon. In: Science, 258, 1992, 1131-1133. p 0; Li, X.; He, Y.; Swihart, M.T.: Surface Functionalization of Silicon Nanoparticles Produced by Laser-Driven Pyrolysis of Silane followed by HF-HNO3 Etching. In: Langmuir, 20, 2004, 4720-4727. p 0
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56 |
Entgegengehaltene Nichtpatentliteratur/Zitate, vom Anmelder genannt |
CTNP |
Aitken et al., J. Organomet. Chem. 1985, 279, C11. 1; Blau, Diplomarbeit, Universität Heidelberg, 1992 1; Buschbeck, Diplomarbeit, TU Chemnitz, 1999 1; Dhas et al., Chem. Mater. 1988, 10, 3278 1; Hasegawa et al., J. Mater. Sci. 1980, 15, 720 1; Heath et al. Science 1992, 258, 1131 1; Hengge et al., Phosphorus and Sulfur 1986, 28, 43 1; Kauzlarich et al. "A new solution route to hydrogen-terminated silicon nanoparticles: synthesis, functionalization and water stability" Nanotechnol. 18 (2007) 1-6 1; Kauzlarich et al. "Room Temperature Solution Synthesis of Alkyl-Capped Tetrahedral Shaped Silicon Nanocrystals" 124 (2002) 1150-1151 1; Kauzlarich et al. Chem. Commun. 2002, 1822 1; Kauzlarich et al. Chem. Commun. 2006, 658. 1; Kauzlarich et al. Chem. Mater. 2001, 13, 765; Kauzlarich et al., Chem. Mater. 2000, 12, 983 1; Kauzlarich et al. J. Am. Chem. Soc. 1996, 121, 12461 1; Kauzlarich et al., "Functionalization of Silicon Nanoparticles via Silanization: Alkyl, Halide and Ester" 3: Cluster Sci. 19 (2008) 341-355 1; Kauzlarich et al., J. Am. Chem. Soc. 2007, 129, 10668 1; Kauzlarich et al., J. Clust. Sci. 2006, 17, 565 1; Kornowski et al., Adv. Mater. 1993, 5, 634 1; Li et al. Langmuir 2004, 20, 4720; Makimura et al. Appl. Phys. Lett. 2000, 76, 1401 1; Miller et al., Chem. Rev. 1989, 89, 1359 1; Seyferth et al., J. Am. Ceram. Soc. 1992, 75, 1300 1; Uhlig et al. J. Organomet. Chem. 2000, 598, 202 1; Uhlig et al., J. Organomet. Chem. 2000, 605, 22 1; Warner et al., Chem. Commun. 2005, 1833 1; Warner et al., J. Phys. Chem. Lett. B 2005, 109, 19064 1; West et al., J. Organomet. Chem. 1986, 300, 327 1; Wielage et al., J. Mater. Proc. Techn. 2003, 132, 313 1; Zhang et al., Nanotechnology 2007, 095601 1
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