| 54 |
Title |
TI |
[DE] Stoßstromfeste Halbleiterdiode mit weichem Abschaltverhalten und Verfahren zur Herstellung einer Halbleiterdiode
[EN] Bipolar semiconductor constituent e.g. semiconductor diode has electric current path that is arranged extending only through n dope zone in semiconductor main portion from one metal covering to another metal covering |
| 71/73 |
Applicant/owner |
PA |
Infineon Technologies Austria AG, Villach, AT
|
| 72 |
Inventor |
IN |
Baburske, Roman, 09112 Chemnitz, DE
;
Lutz, Josef, 09126 Chemnitz, DE
;
Schulze, Hans-Joachim, 82024 Taufkirchen, DE
;
Siemieniec, Ralf, Villach, AT
|
| 22/96 |
Application date |
AD |
Sep 30, 2009 |
| 21 |
Application number |
AN |
102009047808 |
|
Country of application |
AC |
DE |
|
Publication date |
PUB |
May 5, 2011 |
33
31
32 |
Priority data |
PRC
PRN
PRD |
|
| 51 |
IPC main class |
ICM |
H01L 29/861
(2006.01)
|
| 51 |
IPC secondary class |
ICS |
H01L 21/329
(2006.01)
H01L 29/06
(2006.01)
|
|
IPC additional class |
ICA |
|
|
IPC index class |
ICI |
|
|
Cooperative patent classification |
CPC |
H01L 29/0623
H01L 29/66136
H01L 29/73
H01L 29/861
H01L 29/8611
H01L 2924/0002
|
|
MCD main class |
MCM |
H01L 29/861
(2006.01)
|
|
MCD secondary class |
MCS |
H01L 21/329
(2006.01)
H01L 29/06
(2006.01)
|
|
MCD additional class |
MCA |
|
| 57 |
Abstract |
AB |
[DE] Bipolares Halbleiterbauelement 100, insbesondere Diode, mit einer Anodenstruktur, die ihren Emitterwrart steuert, dass er bei kleinen Stromdichten klein ist und bei großen Stromdichten ausreichend groß, und einer optionalen Kathodenstruktur, die beim Kommutieren zusätzliche Löcher injizieren kann, sowie Herstellungsverfahren dafür.
[EN] The constituent (100) has surfaces (15,16) that are arranged in parallel with respect to semiconductor main portion (20). The metal coverings (8,9) is arranged on the surfaces respectively. An electric current path is arranged extending only through n dope zone in the semiconductor main portion from the metal covering (8) to the metal covering (9). Independent claims are included for the following: (1) method of manufacturing semiconductor diode; and (2) semiconductor diode. |
| 56 |
Cited documents identified in the search |
CT |
DE102004053761A1
DE102008023471A1
EP000001515372A1
JP002007281231A
US000004641174A
|
| 56 |
Cited documents indicated by the applicant |
CT |
DE000003633161C2
DE000010048857A1
DE000010361136B4
|
| 56 |
Cited non-patent literature identified in the search |
CTNP |
|
| 56 |
Cited non-patent literature indicated by the applicant |
CTNP |
Schlangenotto H et al, "Improved Recovery of Fast Power Diodes with Self-Adjusting p Emitter Efficiency", IEEE El. Dev. Letters Vol. 10, 322-324, 1989 1;
Drücke D, Silber D: "Power Diodes with Active Control of Emitter Efficiency", Proceedings of the ISPSD, Osaka, 231-234, 2001 1
|
|
Citing documents |
|
DE102017100109A1
US000008587059B2
US000008860025B2
US000009048095B2
US000009070790B2
US000009384983B2
US000010593668B2
US000010937784B2
|
|
Sequence listings |
|
|
|
Search file IPC |
ICP |
H01L 21/331
H01L 23/62
H01L 29/06
H01L 29/739
H01L 29/73
H01L 29/861
|
