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Document DE102006046845A1 (Pages: 13)

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Bibliographic data Document DE102006046845A1 (Pages: 13)
INID	Criterion	Field	Contents
54	Title	TI	[DE] Halbleiterbauelement mit verbesserter Robustheit [EN] Semiconductor component e.g. bipolar transistor, has charge carrier compensation zone between drift zone and connection zone, where doping concentration of charge carrier compensation zone is greater than concentration of connection zone
71/73	Applicant/owner	PA	Infineon Technologies Austria AG, Villach, AT
72	Inventor	IN	Lutz, Josef, Prof., 09126 Chemnitz, DE ; Schulze, Hans-Joachim, Dr., 85521 Ottobrunn, DE
22/96	Application date	AD	Oct 2, 2006
21	Application number	AN	102006046845
	Country of application	AC	DE
	Publication date	PUB	Apr 3, 2008
33 31 32	Priority data	PRC PRN PRD
51	IPC main class	ICM	H01L 29/861 (2006.01)
51	IPC secondary class	ICS
	IPC additional class	ICA
	IPC index class	ICI
	Cooperative patent classification	CPC	H01L 29/0821 H01L 29/0878 H01L 29/36 H01L 29/41766 H01L 29/73 H01L 29/732 H01L 29/7395 H01L 29/7432 H01L 29/7802 H01L 29/861 H01L 29/87 H01L 29/872
	MCD main class	MCM	H01L 29/861 (2006.01)
	MCD secondary class	MCS
	MCD additional class	MCA
57	Abstract	AB	[DE] Die vorliegende Erfindung betrifft ein Halbleiterbauelement, das aufweist: eine Anschlusszone (11), eine schw�cher als die Anschlusszone (11) dotierte Driftzone (12) eines ersten Leitungstyps, einen Bauelement�bergang zwischen der Driftzone (12) und einer weiteren Bauelementzone (14), und eine zwischen der Driftzone (12) und der Anschlusszone angeordnete Ladungstr�gerkompensationszone (13) des ersten Leitungstyps, deren Dotierungskonzentration geringer ist als die der Anschlusszone (11), deren Dotierungskonzentration wenigstens abschnittsweise in Richtung der Anschlusszone (11) von einer minimalen Dotierungskonzentration zu einer maximalen Dotierungskonzentration zunimmt, wobei die minimale m^-3 betr�gt. [EN] The semiconductor component has a drift zone (12) weakly doped as a connection zone (11). A component transition is provided between the drift zone and a component zone (14), and a charge carrier compensation zone (13) is provided between the drift zone and the connection zone. Doping concentration of the charge carrier compensation zone is greater than doping concentration of the connection zone. The doping concentration of the connection zone increases towards the connection zone from a minimal doping concentration to a maximum doping concentration.
56	Cited documents identified in the search	CT	DE000003932490C2 DE000010053445C2 DE000010245091A1 DE000010360574A1 DE102004039209A1 DE102005009000A1 US000003872494A US000006384431B1
56	Cited documents indicated by the applicant	CT
56	Cited non-patent literature identified in the search	CTNP
56	Cited non-patent literature indicated by the applicant	CTNP
	Citing documents		EP000002711986A4 US000009324847B2 US000009812561B2 US000009818852B2 US000010475881B2 US000010998402B2
	Sequence listings
	Search file IPC	ICP	H01L 29/06 E H01L 29/739 H01L 29/74 H01L 29/78 H01L 29/861