Bibliographic data

Document DE102006046726A1 (Pages: 12)

Bibliographic data Document DE102006046726A1 (Pages: 12)
INID Criterion Field Contents
54 Title TI [DE] Solarzelle mit strukturierter Rückseitenpassivierungsschicht aus SIO<SUB>x</SUB> und SIN<SUB>x</SUB> sowie Verfahren zur Herstellung
[EN] Silicon-based solar cell comprises front-end contacts that are placed on a front-end doped surface layer and a passivation layer with backside contacts that is placed on the backside doped layer
71/73 Applicant/owner PA Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 80686 München, DE
72 Inventor IN Hofmann, Marc, 79232 March, DE ; Kambor, Stephan, 79110 Freiburg, DE
22/96 Application date AD Oct 2, 2006
21 Application number AN 102006046726
Country of application AC DE
Publication date PUB Apr 3, 2008
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31
32		 Priority data PRC
PRN
PRD

51 IPC main class ICM H01L 31/0224 (2006.01)
51 IPC secondary class ICS
IPC additional class ICA
IPC index class ICI
Cooperative patent classification CPC H10F 10/14
H10F 10/16
H10F 77/14
H10F 77/211
H10F 77/311
H10F 77/337
H10F 77/48
Y02E 10/52
MCD main class MCM H01L 31/0224 (2006.01)
MCD secondary class MCS
MCD additional class MCA
57 Abstract AB [DE] strukturierter Rückseitenpassivierungsschicht sowie Verfahren zu deren Herstellung. Die Rückseitenpassivierungsschicht ist dabei auf der innen liegenden, der Rückseite der Solarzelle zugewandten, dotierten Schicht der Solarzelle aufgebracht und besteht aus alternierenden Schichten aus SiNx sowie SiOx. Die Schichtstruktur der Rückseitenpassivierungsschicht kann über einen CVD-Prozess hergestellt werden.
[EN] Silicon-based solar cell comprises front-end (FE) contacts that are placed on a front-end doped surface layer and at least a passivation layer with backside (BS) contacts that is placed on the backside doped layer, where the backside passivation layer is composed of at least one silicon oxide layer that is placed on the backside doped layer, at least a silicon nitride layer that is deposited on the silicon oxide layer and at least an additional superimposed silicon oxide layer. An independent claim is included for preparing the silicon-based solar cell comprising applying the backside passivation layers on the silicon wafer by chemical or physical vapor deposition process.
56 Cited documents identified in the search CT DE000010046170A1
US000005462898A
56 Cited documents indicated by the applicant CT
56 Cited non-patent literature identified in the search CTNP Schultz,O.; Hofmann, M.; Glunz, S.; Willeke, G. P.: SILICON OXIDE / SILICON NITRIDE STACK SYSTEM FOR 20% EFFICIENT SILICON SOLAR CELLS. In: 0-7803-8707-4/05 (C) 2005 IEEE, S. 872-876 n;
Schultz,O., Hofmann,M., Glunz,S.W., Willeke,G.P.: SILICON OXIDE / SILICON NITRIDE STACK SYSTEM FOR 20% EFFICIENT SILICON SOLAR CELLS. In: 0-7803-8707-4/05 (C) 2005 IEEE, S. 872-876 0
56 Cited non-patent literature indicated by the applicant CTNP
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Search file IPC ICP H01L 31/0224
H01L 31/18 EL
H01L 31/18 LFC
H01L 31/18 P
H01L 31/18 TEX