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Bibliographic data Document DE102006014580A1 (Pages: 10)
INID	Criterion	Field	Contents
54	Title	TI	[DE] Randabschluss f�r vertikales Hochvolt-Halbleiterbauelement und Verfahren zu dessen Herstellung f�r einen IGBT [EN] Vertical high volt semiconductor device`s e.g. thyristor, lip, has lateral semiconductor device provided in boundary region adjacent to cell field to contribute to current load-carrying capacity when high volt semiconductor device is on
71/73	Applicant/owner	PA	Infineon Technologies Austria AG, Villach, AT
72	Inventor	IN	R�b, Michael, Dr., Faak am See, AT
22/96	Application date	AD	Mar 29, 2006
21	Application number	AN	102006014580
	Country of application	AC	DE
	Publication date	PUB	Oct 11, 2007
33 31 32	Priority data	PRC PRN PRD
51	IPC main class	ICM	H01L 29/06 (2006.01)
51	IPC secondary class	ICS	H01L 21/331 (2006.01) H01L 29/739 (2006.01) H01L 29/78 (2006.01)
	IPC additional class	ICA
	IPC index class	ICI
	Cooperative patent classification	CPC	H01L 29/0634 H01L 29/0696 H01L 29/0878 H01L 29/0882 H01L 29/42368 H01L 29/7393 H01L 29/7395 H01L 29/7803 H01L 29/7811 H01L 29/7831
	MCD main class	MCM	H01L 29/06 (2006.01)
	MCD secondary class	MCS	H01L 21/331 (2006.01) H01L 29/739 (2006.01) H01L 29/78 (2006.01)
	MCD additional class	MCA
57	Abstract	AB	[DE] Die Erfindung betrifft einen Randabschluss f�r ein Hochvolt-Halbleiterbauelement, bei dem im Randbereich (R) ein laterales Halbleiterbauelement vorgesehen ist, das im eingeschalteten Zustand des Hochvolt-Halbleiterbauelements zu dessen Stromtragf�higkeit beitr�gt. [EN] The lip has a semiconductor body (1) with a semiconductor layer (3) of a conductive type, where the body has an inner area with a cell field (Z) in its front side (4) and a boundary region (R) partly surrounding the inner area. A lateral semiconductor device e.g. lateral field effect transistor, is provided in the region adjacent to the field. The device contributes to its current load-carrying capacity in switched on condition of a high volt semiconductor device e.g. thyristor, and is closable in switched off condition of the high volt semiconductor device. An independent claim is also included for a procedure for manufacturing a lip for an insulated gate bipolar transistor (IGBT).
56	Cited documents identified in the search	CT	US000006870201B1 WO002000038243A1
56	Cited documents indicated by the applicant	CT
56	Cited non-patent literature identified in the search	CTNP
56	Cited non-patent literature indicated by the applicant	CTNP
	Citing documents		Determine documents
	Sequence listings
	Search file IPC	ICP	H01L 21/331 H01L 29/06 E H01L 29/739 H01L 29/78