Bibliographic data

Document DE102005047054B4 (Pages: 12)

Bibliographic data Document DE102005047054B4 (Pages: 12)
INID Criterion Field Contents
54 Title TI [DE] Leistungs-MOS-Transistor mit einer SiC-Driftzone und Verfahren zur Herstellung eines Leistungs-MOS-Transistors
71/73 Applicant/owner PA Infineon Technologies Austria AG, Villach, AT
72 Inventor IN Baumgartl, Johannes, Dr., Riegersdorf, AT ; Rüb, Michael, Dr., Faak am See, AT ; Treu, Michael, Dr., Villach, AT
22/96 Application date AD Sep 30, 2005
21 Application number AN 102005047054
Country of application AC DE
Publication date PUB Apr 3, 2008
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31
32		 Priority data PRC
PRN
PRD

51 IPC main class ICM H01L 29/78 (2006.01)
51 IPC secondary class ICS H01L 21/336 (2006.01)
IPC additional class ICA
IPC index class ICI
Cooperative patent classification CPC H10D 12/031
H10D 30/0295
H10D 30/66
H10D 62/111
H10D 62/393
H10D 62/822
H10D 62/8325
MCD main class MCM H01L 29/78 (2006.01)
MCD secondary class MCS H01L 21/336 (2006.01)
MCD additional class MCA
57 Abstract AB
56 Cited documents identified in the search CT DE000010130158A1
DE000019641839A1
US000006307232B1
US020040007715A1
56 Cited documents indicated by the applicant CT
56 Cited non-patent literature identified in the search CTNP Patent Abstract of Japan & JP 2003249652 A 0;
Patent Abstract of Japan: JP 2003-249 652 A n;
Yih, P.H. u.a.: SiC/Si Heterojunction Diodes Fabricated by Self-Selective and by Blanket Rapid Thermal Chemical Vapor Deposition. In: IEEE Transaction on Electron Devices, Vol. 41, No. 3, 1994, S. 281-287 p 0
56 Cited non-patent literature indicated by the applicant CTNP
Citing documents Determine documents
Sequence listings
Search file IPC ICP H01L 21/336 V
H01L 29/78