Bibliographic data

Document DE102005046711B4 (Pages: 37)

Bibliographic data Document DE102005046711B4 (Pages: 37)
INID Criterion Field Contents
54 Title TI [DE] Verfahren zur Herstellung eines vertikalen MOS-Halbleiterbauelementes mit dünner Dielektrikumsschicht und tiefreichenden vertikalen Abschnitten
71/73 Applicant/owner PA Infineon Technologies Austria AG, Villach, AT
72 Inventor IN Hirler, Franz, Dr., 84424 Isen, DE ; Mauder, Anton, Dr., 83059 Kolbermoor, DE ; Pfirsch, Frank, Dr., 81545 München, DE ; Pippan, Manfred, Dr., Nötsch, AT ; Rupp, Roland, Dr., 91207 Lauf, DE ; Rüb, Michael, Dr., Faak am See, AT ; Schulze, Hans-Joachim, Dr., 85521 Ottobrunn, DE ; Schäfer, Herbert, Dr., 85635 Höhenkirchen-Siegertsbrunn, DE ; Sedlmaier, Stefan, Dr., 80995 München, DE ; Weber, Hans, Dr., 83404 Ainring, DE ; Willmeroth, Armin, 86163 Augsburg, DE
22/96 Application date AD Sep 29, 2005
21 Application number AN 102005046711
Country of application AC DE
Publication date PUB Dec 27, 2007
33
31
32
Priority data PRC
PRN
PRD


51 IPC main class ICM H01L 21/336 (2006.01)
51 IPC secondary class ICS
IPC additional class ICA
IPC index class ICI
Cooperative patent classification CPC H01L 21/76224
H01L 29/0653
H01L 29/165
H01L 29/66734
H01L 29/7804
H01L 29/7813
H01L 29/7849
MCD main class MCM H01L 21/336 (2006.01)
MCD secondary class MCS
MCD additional class MCA
57 Abstract AB
56 Cited documents identified in the search CT DE000010214175A1
EP000000296348B1
US000004522662A
WO002002067332A2
56 Cited documents indicated by the applicant CT
56 Cited non-patent literature identified in the search CTNP
56 Cited non-patent literature indicated by the applicant CTNP
Citing documents Determine documents
Sequence listings
Search file IPC ICP H01L 21/336 V
H01L 29/78