Bibliographic data

Document DE102004063991B4 (Pages: 19)

Bibliographic data Document DE102004063991B4 (Pages: 19)
INID Criterion Field Contents
54 Title TI [DE] Verfahren zur Herstellung von dotierten Halbleitergebieten in einem Halbleiterkörper eines lateralen Trenchtransistors
71/73 Applicant/owner PA Infineon Technologies AG, 85579 Neubiberg, DE
72 Inventor IN Hirler, Franz, Dr., 84424 Isen, DE ; Meyer, Thorsten, Dr., 81545 München, DE ; Rüb, Michael, Dr., Faak am See, AT ; Schmitt, Markus, 81373 München, DE ; Schäffer, Carsten, Sattendorf, AT ; Tolksdorf, Carolin, 82327 Tutzing, DE ; Wahl, Uwe, Dr.-Ing., 80798 München, DE ; Willmeroth, Armin, 86163 Augsburg, DE
22/96 Application date AD Oct 29, 2004
21 Application number AN 102004063991
Country of application AC DE
Publication date PUB Jun 18, 2009
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31
32		 Priority data PRC
PRN
PRD		 DE
102004052643
20041029
51 IPC main class ICM H01L 21/336 (2006.01)
51 IPC secondary class ICS H01L 29/78 (2006.01)
IPC additional class ICA
IPC index class ICI
Cooperative patent classification CPC H01L 21/26586
H10D 30/025
H10D 30/0285
H10D 30/0289
H10D 30/60
H10D 30/658
H10D 62/127
H10D 62/307
H10D 62/393
H10D 64/256
H10D 64/257
H10D 64/513
H10D 64/516
MCD main class MCM H01L 21/336 (2006.01)
MCD secondary class MCS H01L 29/78 (2006.01)
MCD additional class MCA
57 Abstract AB
56 Cited documents identified in the search CT DE000019743342C2
56 Cited documents indicated by the applicant CT
56 Cited non-patent literature identified in the search CTNP
56 Cited non-patent literature indicated by the applicant CTNP
Citing documents Determine documents
Sequence listings
Search file IPC ICP H01L 21/336
H01L 29/06
H01L 29/10
H01L 29/417
H01L 29/423
H01L 29/78