| 54 |
Title |
TI |
[DE] Halbleiterbauelement mit erhöhter Durchbruchspannung sowie dazugehöriges Herstellungsverfahren
[EN] High breakdown voltage semiconductor device and process for fabricating the same
[FR] Dispositif semi-conducteur à tension de claquage élevée et procédé pour sa fabrication |
| 71/73 |
Applicant/owner |
PA |
INFINEON TECHNOLOGIES AG, DE
|
| 72 |
Inventor |
IN |
AHLERS DIRK DR, DE
;
DEBOY GERALD DR, DE
;
MARION MIGUEL CUADRON, DE
;
RUEB MICHAEL DR, AT
;
STENGL JENS-PEER, DE
;
WEBER HANS DR, DE
;
WILLMEROTH ARMIN, DE
|
| 22/96 |
Application date |
AD |
Nov 14, 2001 |
| 21 |
Application number |
AN |
01127071 |
|
Country of application |
AC |
EP |
|
Publication date |
PUB |
Dec 6, 2006 |
33
31
32 |
Priority data |
PRC
PRN
PRD |
DE
10061310
20001208
|
| 51 |
IPC main class |
ICM |
H01L 29/06
(2006.01)
|
| 51 |
IPC secondary class |
ICS |
H01L 21/336
(2006.01)
H01L 29/78
(2006.01)
|
|
IPC additional class |
ICA |
|
|
IPC index class |
ICI |
|
|
Cooperative patent classification |
CPC |
H10D 30/66
H10D 30/665
H10D 62/106
H10D 62/111
H10D 62/127
H10D 62/393
H10D 64/256
|
|
MCD main class |
MCM |
H01L 29/06
(2006.01)
|
|
MCD secondary class |
MCS |
H01L 21/336
(2006.01)
H01L 29/78
(2006.01)
|
|
MCD additional class |
MCA |
H01L 29/10
(2006.01)
|
| 57 |
Abstract |
AB |
|
| 56 |
Cited documents identified in the search |
CT |
DE000010106006A1
DE000019954352A1
DE000019958234A1
WO002000014807A1
|
| 56 |
Cited documents indicated by the applicant |
CT |
|
| 56 |
Cited non-patent literature identified in the search |
CTNP |
STENGL R ET AL: "VARIATION OF LATERAL DOPING - A NEW CONCEPT TO AVOID HIGH VOLTAGE BREAKDOWN OF PLANAR JUNCTIONS", INTERNATIONAL ELECTRON DEVICES MEETING. WASHINGTON, DEC. 1 - 4, 1985, WASHINGTON, IEEE, US, 1 December 1985 (1985-12-01), pages 154 - 157, XP002013050 0
|
| 56 |
Cited non-patent literature indicated by the applicant |
CTNP |
|
|
Citing documents |
|
Determine documents
|
|
Sequence listings |
|
|
|
Search file IPC |
ICP |
H01L 21/336 V
H01L 29/06 E
H01L 29/78
|
