| 54 |
Title |
TI |
[DE] Lateraler Trenchtransistor sowie Verfahren zur Herstellung desselben
[EN] Lateral trench transistor has body region inside which a semiconductor region is provided which is electrically connected with source contact and its type of endowment corresponds to the type of endowment of body region |
| 71/73 |
Applicant/owner |
PA |
Infineon Technologies AG, 81669 München, DE
|
| 72 |
Inventor |
IN |
Hirler, Franz, Dr., 84424 Isen, DE
;
Meyer, Thorsten, Dr., 81545 München, DE
;
Rüb, Michael, Dr., Faak am See, AT
;
Schmitt, Markus, 81373 München, DE
;
Schäffer, Carsten, Sattendorf, AT
;
Tolksdorf, Carolin, 82327 Tutzing, DE
;
Wahl, Uwe, Dr.-Ing., 80798 München, DE
;
Willmeroth, Armin, 86163 Augsburg, DE
|
| 22/96 |
Application date |
AD |
Oct 29, 2004 |
| 21 |
Application number |
AN |
102004052643 |
|
Country of application |
AC |
DE |
|
Publication date |
PUB |
May 4, 2006 |
33
31
32 |
Priority data |
PRC
PRN
PRD |
|
| 51 |
IPC main class |
ICM |
H01L 29/78
(2006.01)
|
| 51 |
IPC secondary class |
ICS |
H01L 21/336
(2006.01)
|
|
IPC additional class |
ICA |
|
|
IPC index class |
ICI |
|
|
Cooperative patent classification |
CPC |
H01L 21/26586
H10D 30/025
H10D 30/0285
H10D 30/0289
H10D 30/60
H10D 30/658
H10D 62/127
H10D 62/307
H10D 62/393
H10D 64/257
H10D 64/513
H10D 64/516
|
|
MCD main class |
MCM |
H01L 29/78
(2006.01)
|
|
MCD secondary class |
MCS |
H01L 21/336
(2006.01)
|
|
MCD additional class |
MCA |
|
| 57 |
Abstract |
AB |
[DE] Ein lateraler Trenchtransistor (1) weist einen Halbleiterkörper (2) auf, in dem ein Sourcegebiet (3) und ein Bodygebiet (4), die durch einen Sourcekontakt (12) kontaktiert werden, ein Draingebiet (5), das durch einen Drainkontakt (15) kontaktiert wird, und einen Gatetrench (6), in dem eine gegenüber dem Halbleiterkörper (2) isolierte Gateelektrode (7) eingebettet ist, vorgesehen sind. Innerhalb des Bodygebiets (4) bzw. daran angrenzend ist ein hochdotiertes Halbleitergebiet (10) vorgesehen, das mit dem Sourcekontakt (12) elektrisch verbunden ist und dessen Dotiertyp dem des Bodygebiets (4) entspricht.
[EN] Lateral trench transistor (200) has a body region (4) inside which a semiconductor region (10) is provided adjoining to it. The semiconductor region is electrically connected with the source contact (12) and its type of endowment corresponds to the type of endowment of body region. An independent claim is also included for a method for manufacturing of endowed semiconductor region. |
| 56 |
Cited documents identified in the search |
CT |
DE000019742342A1
DE000010210138A1
DE000010358697A1
DE000019743342C2
DE000019818300C1
EP000001094525A2
US000003975221A
US020020099922A1
US020040014263A1
|
| 56 |
Cited documents indicated by the applicant |
CT |
|
| 56 |
Cited non-patent literature identified in the search |
CTNP |
Sakakibara et al: Break-through of the Si Limit under 300 V breakdown voltage with new concept power device: Super 3D MOSFET. In: ISPSD 2002, 2002, S233 - 236. n;
Yamaguchi et al: Ultra Low ON-resistance Super 3D MOSFET. In: ISPSD 2003, 2003, S. 319 - 319. n
|
| 56 |
Cited non-patent literature indicated by the applicant |
CTNP |
|
|
Citing documents |
|
Determine documents
|
|
Sequence listings |
|
|
|
Search file IPC |
ICP |
H01L 21/336
H01L 29/06
H01L 29/10
H01L 29/417
H01L 29/423
H01L 29/739
H01L 29/78
|
