Bibliographic data

Document DE000010239580A1 (Pages: 20)

Bibliographic data Document DE000010239580A1 (Pages: 20)
INID Criterion Field Contents
54 Title TI [DE] Verfahren zum Ausbilden eines Kompensationsgebiets
[EN] Production of a compensation region used in semiconductors comprises forming primary doping material depots of first p-conductivity in a first region in a laterally displaced manner, and diffusing out the primary doping material depots
71/73 Applicant/owner PA Infineon Technologies AG, 81669 München, DE
72 Inventor IN Rüb, Michael, Dr., Faak am See, AT
22/96 Application date AD Aug 28, 2002
21 Application number AN 10239580
Country of application AC DE
Publication date PUB Mar 18, 2004
33
31
32		 Priority data PRC
PRN
PRD

51 IPC main class ICM H01L 21/334
51 IPC secondary class ICS H01L 21/328
H01L 29/06
IPC additional class ICA
IPC index class ICI
Cooperative patent classification CPC H01L 29/0634
H01L 29/41766
H01L 29/66136
H01L 29/66295
H01L 29/66333
H01L 29/66363
H01L 29/66712
H01L 29/7802
MCD main class MCM
MCD secondary class MCS H01L 21/329 (2006.01)
H01L 21/331 (2006.01)
H01L 21/332 (2006.01)
H01L 21/336 (2006.01)
H01L 29/06 (2006.01)
H01L 29/78 (2006.01)
MCD additional class MCA
57 Abstract AB [DE] Um ein Kompensationsgebiet (30) für ein Kompensationshalbleiterbauelement (10) auf besonders einfache Art und Weise und doch wohldefiniert und zuverlässig herstellen zu können, wird vorgeschlagen, primäre Dotierstoffdepots (31, 32, 33) zueinander lateral versetzt in einem ersten Bereich (21) eines Halbleitermaterialbereichs (20) auszubilden und dann nachfolgend durch Ausdiffundieren über eine entsprechende Überlagerung daraus entstehender sekundärer Dotierstoffdepots (31', 32', 33') in das entsprechende Kompensationsgebiet (30) in zusammenhängender Form derart auszubilden, dass sich das Kompensationsgebiet (30) zumindest zum Teil lateral erstreckt.
[EN] Production of a compensation region comprises forming primary doping material depots (31, 32, 33) of first p-conductivity in a first region (21) or second n-conductivity in a semiconductor material region (20) in a laterally displaced manner, and diffusing out the primary doping material depots in the first region forming a compensation region as a superposition made from secondary doping material depots (31', 32', 33') produced from the primary doping material depots. Independent claims are also included for the following: (1) Compensation semiconductor component; and (2) Process for the production of the compensation semiconductor component.
56 Cited documents identified in the search CT DE000010008570A1
56 Cited documents indicated by the applicant CT
56 Cited non-patent literature identified in the search CTNP
56 Cited non-patent literature indicated by the applicant CTNP
Citing documents Determine documents
Sequence listings
Search file IPC ICP H01L 21/334
H01L 29/06 E