Bibliographic data

Document DE000010129346A1 (Pages: 12)

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Bibliographic data Document DE000010129346A1 (Pages: 12)
INID	Criterion	Field	Contents
54	Title	TI	[DE] Verfahren zur Herstellung eines Halbleiterbauelementes [EN] Production of a semiconductor component e.g. transistor comprises forming recesses in a wafer from the rear side below active regions. processing the regions of wafer exposed on base of the recesses, and cutting the wafers above the lattice
71/73	Applicant/owner	PA	INFINEON TECHNOLOGIES AG, DE
72	Inventor	IN	RUEB MICHAEL, AT
22/96	Application date	AD	Jun 19, 2001
21	Application number	AN	10129346
	Country of application	AC	DE
	Publication date	PUB	Jan 9, 2003
33 31 32	Priority data	PRC PRN PRD
51	IPC main class	ICM	H01L 21/306
51	IPC secondary class	ICS	H01L 21/301 H01L 21/336 H01L 21/784 H01L 29/78
	IPC additional class	ICA
	IPC index class	ICI
	Cooperative patent classification	CPC	H01L 21/30655 H01L 21/78 H01L 29/42368 H01L 29/781 H01L 29/7813 H01L 29/7827
	MCD main class	MCM
	MCD secondary class	MCS	H01L 21/78 (2006.01) H01L 29/78 (2006.01)
	MCD additional class	MCA	H01L 21/3065 (2006.01) H01L 29/423 (2006.01)
57	Abstract	AB	[DE] Die vorliegende Erfindung betrifft ein Verfahren zur Herstellung eines Halbleiterbauelements, bei dem ausgehend von einer R�ckseite eines Wafers (100) Aussparungen (112) erzeugt werden, wodurch zwischen den Aussparungen (112) ein st�tzendes Gitter (110) aus Wafermaterial verbleibt, wodurch zum einen eine Bearbeitung der in den Aussparungen freiliegende Halbleiterbereich m�glich ist und zum anderen eine ausreichende mechanische Stabilit�t des Wafers gew�hrleistet ist. [EN] Production of semiconductor component comprises: preparing wafer having active regions for semiconductor components; forming recesses in the wafer from the wafer rear side below the active regions so that supporting lattice of wafer material remains between recesses; processing regions of the wafer exposed on base of the recesses; and cutting wafers above lattice to form semiconductor components. Production of a semiconductor component comprises: preparing a wafer with a front side (101) and a rear side (102), in which a number of active regions (20) for semiconductor components are provided; forming recesses (112) in the wafer from the rear side below the active regions so that supporting lattice (110) of wafer material remains between the recesses; processing the regions of the wafer exposed on the base (103) of the recesses; and cutting the wafers above the lattice to form number of semiconductor components. Preferred Features: The recesses are produced by etching. The wafers have crevice regions between the active regions. The crevice regions are removed on cutting the wafers.
56	Cited documents identified in the search	CT	US000004003127A US000004259682A US000004784721A US000005354695A US000005753014A US000006071819A US000006124612A
56	Cited documents indicated by the applicant	CT
56	Cited non-patent literature identified in the search	CTNP	JP 09134893 A. In: Patent Abstracts of Japan 0
56	Cited non-patent literature indicated by the applicant	CTNP
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	Search file IPC	ICP	H01L 21/306 H01L 21/784 H01L 29/78