| 54 |
Title |
TI |
[DE] Halbleiterbauelement mit erhöhter Durchbruchspannung sowie dazugehöriges Herstellungsverfahren
[EN] Semiconducting component with increased breakdown voltage has active structure and edge structure, compensation field strength in edge structure lower than that in active area |
| 71/73 |
Applicant/owner |
PA |
Infineon Technologies AG, 81669 München, DE
|
| 72 |
Inventor |
IN |
Ahlers, Dirk, Dr., 80796 München, DE
;
Debov, Gerald, Dr., 80538 München, DE
;
Marion, Miguel Cuadron, 81543 München, DE
;
Rüb, Michael, Dr., Faak, AT
;
Stengl, Jens-Peer, 82284 Grafrath, DE
;
Weber, Hans, Dr., 83404 Ainring, DE
;
Willmeroth, Armin, 86163 Augsburg, DE
|
| 22/96 |
Application date |
AD |
Dec 8, 2000 |
| 21 |
Application number |
AN |
10061310 |
|
Country of application |
AC |
DE |
|
Publication date |
PUB |
Jun 27, 2002 |
33
31
32 |
Priority data |
PRC
PRN
PRD |
DE
10066053
20001208
|
| 51 |
IPC main class |
ICM |
H01L 29/06
|
| 51 |
IPC secondary class |
ICS |
H01L 29/739
H01L 29/78
|
|
IPC additional class |
ICA |
|
|
IPC index class |
ICI |
|
|
Cooperative patent classification |
CPC |
H01L 29/0634
H01L 29/41766
H01L 29/7802
H01L 29/7811
|
|
MCD main class |
MCM |
|
|
MCD secondary class |
MCS |
H01L 29/06
(2006.01)
H01L 29/78
(2006.01)
|
|
MCD additional class |
MCA |
|
| 57 |
Abstract |
AB |
[DE] Die Erfindung betrifft ein Halbleiterbauelement mit erhöhter Durchbruchspannung mit einer aktiven Struktur (AS) und einer Randstruktur (RS). Eine Vielzahl von ersten und zweiten Rand-Kompensationsgebieten (2 und 3) sind hierbei derart in der Randstruktur ausgebildet, dass die zweiten Rand-Kompensationsgebiete (3) vollständig von Ladungsträgern ausgeräumt werden und eine Kompensationsfeldstärke in der Randstruktur (RS) geringer ist als eine Kompensationsfeldstärke in einer aktiven Struktur (AS) des Halbleiterbauelements.
[EN] The device has an active structure and an edge structure with edge compensation areas and floating edge compensation areas with edge compensation zones. Certain areas are fully depleted of charge carriers before reaching breakdown voltage. The compensation field strength in the edge structure is lower than that in an active area. The device has an active structure (AS) with a blocking pn-junction in a semiconducting substrate, a first zone (6) of a first conductor type connected to a first electrode (S) and bounding on a zone of opposite type forming the junction blocking zone (7) also connected to the first electrode, a second zone (1) of first type connected to a second electrode (D) and compensation areas (3') nested between the first and second zones. An edge structure (RS) has a number of first edge compensation areas (2) of the first type and a number of floating edge compensation areas (3) of the second type with edge compensation zones (4) and nested with the first areas so that the second areas are fully depleted of charge carriers before reaching the breakdown voltage. The compensation field strength in the edge structure is lower than that in an active area. Independent claims are also included for the following: a method of manufacturing a semiconducting component. |
| 56 |
Cited documents identified in the search |
CT |
EP000001011146A1
US000004750028A
US000004754310A
US000005216275A
|
| 56 |
Cited documents indicated by the applicant |
CT |
|
| 56 |
Cited non-patent literature identified in the search |
CTNP |
|
| 56 |
Cited non-patent literature indicated by the applicant |
CTNP |
|
|
Citing documents |
|
Determine documents
|
|
Sequence listings |
|
|
|
Search file IPC |
ICP |
H01L 29/06 E
H01L 29/739
H01L 29/78
|
