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Bibliographic data Document DE000010051909B4 (Pages: 16)
INID	Criterion	Field	Contents
54	Title	TI	[DE] Randabschluss f�r Hochvolt-Halbleiterbauelement und Verfahren zum Herstellen eines Isolationstrenches in einem Halbleiterk�rper f�r solchen Randabschluss
71/73	Applicant/owner	PA	Infineon Technologies AG, 81669 M�nchen, DE
72	Inventor	IN	Ahlers, Dirk, 80796 M�nchen, DE ; Detzel, Thomas, Villach, AT ; Friza, Wolfgang, Villach, AT ; R�b, Michael, Faak, AT
22/96	Application date	AD	Oct 19, 2000
21	Application number	AN	10051909
	Country of application	AC	DE
	Publication date	PUB	Mar 22, 2007
33 31 32	Priority data	PRC PRN PRD
51	IPC main class	ICM	H01L 29/06 (2006.01)
51	IPC secondary class	ICS
	IPC additional class	ICA
	IPC index class	ICI
	Cooperative patent classification	CPC	H01L 29/0649 H01L 29/402 H01L 29/407
	MCD main class	MCM	H01L 29/06 (2006.01)
	MCD secondary class	MCS	H01L 29/40 (2006.01)
	MCD additional class	MCA
57	Abstract	AB
56	Cited documents identified in the search	CT	DE000003825547A1 DE000019531369A1 DE000069005805T2 EP000000436171B1 US000004927772A US000005113237A US000005266831A US000005486718A US000005714396A WO002000038242A1
56	Cited documents indicated by the applicant	CT
56	Cited non-patent literature identified in the search	CTNP
56	Cited non-patent literature indicated by the applicant	CTNP
	Citing documents		No results
	Sequence listings
	Search file IPC	ICP	H01L 29/06 E H01L 29/78