Bibliographic data

Document DE000010051909A1 (Pages: 14)

Bibliographic data Document DE000010051909A1 (Pages: 14)
INID Criterion Field Contents
54 Title TI [DE] Randabschluss für Hochvolt-Halbleiterbauelement und Verfahren zum Herstellen eines Isolatorgebietes in einem Halbleiterkörper für solchen Randabschluss
[EN] Edge border used for high voltage semiconductor component has the site of the bend and sealing of equipotential lines applied using a voltage in an insulating region
71/73 Applicant/owner PA Infineon Technologies AG, 81669 München, DE
72 Inventor IN Ahlers, Dirk, 80796 München, DE ; Detzel, Thomas, Villach, AT ; Friza, Wolfgang, Villach, AT ; Rüb, Michael, Faak, AT
22/96 Application date AD Oct 19, 2000
21 Application number AN 10051909
Country of application AC DE
Publication date PUB May 16, 2002
33
31
32		 Priority data PRC
PRN
PRD

51 IPC main class ICM H01L 29/06
51 IPC secondary class ICS
IPC additional class ICA
IPC index class ICI
Cooperative patent classification CPC H01L 29/0649
H01L 29/402
H01L 29/407
MCD main class MCM
MCD secondary class MCS H01L 29/06 (2006.01)
H01L 29/40 (2006.01)
MCD additional class MCA
57 Abstract AB [DE] Die Erfindung betrifft einen Randabschluss für ein Hochvolt-Halbleiterbauelement, bei dem der Ort der Krümmung und Verdichtung von Äquipotentiallinien (9) in ein vertikal verlaufendes Isolatorgebiet (6) verlegt ist. Außerdem bezieht sich die Erfindung auf ein Verfahren zum Herstellen eines solchen Isolatorgebietes (6) durch Ätzen, thermisches Oxidieren und Verfüllen von wenigstens zwei Gräben (10').
[EN] Edge border comprises: a semiconductor body (1) of one conducting type with semiconducting regions (2,3) on an edge surface region bordering a first main surface; and a field plate (4) arranged on the edge surface region and the first main surface. The site of the bend and sealing of equipotential lines (9) is applied using a voltage in an insulating region (6). An Independent claim is also included for a process for the production of an insulating region in a semiconductor body. Preferred Features: The insulating region is an insulating region extending vertically from the first main surface into the semiconductor body.
56 Cited documents identified in the search CT DE000003825547A1
WO002000038242A1
56 Cited documents indicated by the applicant CT
56 Cited non-patent literature identified in the search CTNP
56 Cited non-patent literature indicated by the applicant CTNP
Citing documents Determine documents
Sequence listings
Search file IPC ICP H01L 29/06 E
H01L 29/78