| 54 |
Titel |
TI |
[EN] POWER ELECTRONICS MODULE |
| 71/73 |
Anmelder/Inhaber |
PA |
AUDI AG
|
| 72 |
Erfinder |
IN |
APELSMEIER ANDREAS
;
ASAM JOHANN
|
| 22/96 |
Anmeldedatum |
AD |
11.04.2018 |
| 21 |
Anmeldenummer |
AN |
201880038531 |
|
Anmeldeland |
AC |
CN |
|
Veröffentlichungsdatum |
PUB |
04.02.2020 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
EP
2018059347
11.04.2018
|
33
31
32 |
PRC
PRN
PRD |
EP
17166088
11.04.2017
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 23/49
(2006.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
H01L 23/34
(2006.01)
H01L 23/492
(2006.01)
H01L 25/07
(2006.01)
H01L 25/11
(2006.01)
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H01L 2223/6627
H01L 2224/2612
H01L 2224/29339
H01L 2224/29582
H01L 2224/32014
H01L 2224/37147
H01L 2224/40095
H01L 2224/41174
H01L 2224/48155
H01L 2224/4824
H01L 2224/4826
H01L 2224/48491
H01L 2224/73221
H01L 2224/83101
H01L 2224/83447
H01L 2224/83801
H01L 2224/83825
H01L 2224/8384
H01L 2224/84447
H01L 2224/8484
H01L 23/34
H01L 23/492
H01L 23/49822
H01L 23/49833
H01L 24/20
H01L 24/29
H01L 24/37
H01L 24/40
H01L 24/41
H01L 24/48
H01L 25/071
H01L 25/074
H01L 25/112
H01L 25/117
H01L 2924/00014
H01L 2924/09701
H01L 2924/10272
H01L 2924/1203
H01L 2924/1301
H01L 2924/13055
H01L 2924/13091
H01L 2924/15787
H01L 2924/19104
|
|
MCD-Hauptklasse |
MCM |
H01L 23/49
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
H01L 23/34
(2006.01)
H01L 23/492
(2006.01)
H01L 25/07
(2006.01)
H01L 25/11
(2006.01)
|
|
MCD-Zusatzklasse |
MCA |
|
| 57 |
Zusammenfassung |
AB |
[EN] A power electronics module (10) comprises a substrate (12) with a substrate metallization layer (14), which is separated into conducting areas (16, 18) for providing conducting paths for the power electronics module (10); a semiconductor switch chip (26) bonded with a first power electrode (28) to a first conducting area (18) of the substrate metallization layer (14); a conductor plate (34, 34') bonded to a second power electrode (30) of the semiconductor switch chip (26) opposite to the first power electrode (28); and a gate conductor (40, 40') bonded to a gate electrode (32) of the semiconductor switch chip (26) besides the second power electrode (30); wherein the conductor plate (34, 34') extends to a second conducting area (18) of the substrate metallization layer (14) and the gate conductor (40, 40') runs through an opening (38) in the conductor plate (34, 34') arranged above the gate electrode (32). |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
CN000205984938U
DE102012204159A1
EP000000513410A1
US020120223415A1
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
|
Zitierende Dokumente |
|
keine Treffer
|
|
Sequenzprotokoll |
|
|
|
Prüfstoff-IPC |
ICP |
H01L 23/498
|
